High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm

Abstract

Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double “W”-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm2 at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T0 = (132 ± 3) K over the whole temperature range and T1 = (159 ± 13) K between 10 °C and 70 °C and T1 = (40 ± 1) K between 80 °C and 100 °C.

Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As „W"-Quantum Well Lasers Emitting at 1.3 μm

“…Characteristic temperatures of T 0 = (76 ± 7) K and T 1 = (84 ± 9) K are determined using the same procedure as outlined above. Furthermore, a non-exponential behavior of T 1 is observed similar to previous studies [15]. A separate analysis of T 1 between 10°C & 60°C and 70°C & 100°C yields values of T 1 = (126 ± 7) K and T 1 = (33 ± 3) K, respectively.…”

“…A differential efficiency of 58 % and a threshold current density of 0.31 kA/cm 2 are deduced from the measurement taken at 20°C. These results imply an improvement by 41 % while the threshold current density is reduced by −69 % compared to previous studies [15]. Furthermore, operation based on the fundamental type-II transition is verified by investigating the spectral properties of sample A above threshold in the temperature range between 10°C and 100°C.…”

“…A comparison of the results obtained in Secs. III-A and III-B as well as the literature [15] indicate that a substantial improvement of the temperature stability is possible if the threshold current densities are decreased. Possible strategies towards this goal include a further optimization of the wave guiding structure, the utlization of more active "W"-QWHs per laser as well as the utilization of different material systems.…”

Room‐temperature laser operation of a (Ga,In)As/Ga(As,Bi)/(Ga,In)As W‐type laser diode

“…First experimental observation of room‐temperature lasing from a (Ga,In)As/Ga(As,Sb)/(Ga,In)As W‐type structure has been reported in 2002 [10]. Recently, promising results have been achieved for (Ga,In)As/Ga(As,Sb)/(Ga,In)As W‐type structures showing laser emission at 1.3 μm [11]. Since Bi incorporation in GaAs shows an upward shift of the valance band by ∼53 meV/%Bi, replacing Ga(As,Sb) with Ga(As,Bi) gives an exciting path for novel laser devices [12].…”

Mode-locking in vertical external-cavity surface-emitting lasers with type-II quantum-well configurations

“…In pulsed operation, electrical injection pumped edge-emitting gain chips based on type-II QW design have produced pulses with 1.4 W output power per facet [2]. Not only has it been demonstrated that type-II QWs are able to reach new wavelength ranges but the studies of the systems in the 1.3 µm region also showed that the type-II QW configuration tends to be less sensitive to changes in temperature [3].…”