Novel TEM method for large-area analysis of misfit dislocation networks in semiconductor heterostructures

Spiecker, Erdmann; Schöne, J; Rajagopalan, S; Jäger, W.

doi:10.1007/3-540-31915-8_24

Cited by 2 publications

(1 citation statement)

References 19 publications

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“…While a square one with screw dislocations was accommodated to the twin of the two crystals, the other linear network with dislocations of the A similar principle to LACBED can be applied in direct imaging with bend contours as well. In the bend contour method, presented by Spiecker et al [59,88,89], also direct space, and diffraction information is used. However, for this method, the images are formed in the imaging mode and overlaying bend contours, which are the representations of the hkl lines in the direct space, are used for the Burgers vector determination.…”

Section: Large-angle Convergent-beam Electron Diffraction For Disloca...mentioning

confidence: 99%

Dislocation Analysis in SiGe Heterostructures by Large-Angle Convergent Beam Electron Diffraction

Groiß

2019

Crystals

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Dislocations play a crucial role in self-organization and strain relaxation mechanisms in SiGe heterostructures. In most cases, they should be avoided, and different strategies exist to exploit their nucleation properties in order to manipulate their position. In either case, detailed knowledge about their exact Burgers vectors and possible dislocation reactions are necessary to optimize the fabrication processes and the properties of SiGe materials. In this review a brief overview of the dislocation mechanisms in the SiGe system is given. The method of choice for dislocation characterization is transmission electron microscopy. In particular, the article provides a detailed introduction into large-angle convergent-beam electron diffraction, and gives an overview of different application examples of this method on SiGe structures and related systems.

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Section: Large-angle Convergent-beam Electron Diffraction For Disloca...mentioning

confidence: 99%

Dislocation Analysis in SiGe Heterostructures by Large-Angle Convergent Beam Electron Diffraction

Groiß

2019

Crystals

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Tilt generation in step-graded InxGa1−xAs metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer

Ghanad-Tavakoli¹,

Hulko²,

Thompson³

2008

Journal of Applied Physics

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Metamorphic pseudosubstrates of In0.42Ga0.58As were grown by molecular beam epitaxy using step-graded InxGa1−xAs buffer layers grown either directly on a (001) GaAs substrate or on a GaAs substrate overgrown with a layer of low-temperature grown In0.51Ga0.49P (LT-InGaP). The structures were examined using x-ray reciprocal space mapping to determine the characteristics of the pseudosubstrates and buffer layers. For the sample grown on the LT-InGaP layer, the pseudosubstrate exhibited an asymmetric tilt around [11¯0] toward the [110] direction. Weak-beam dark-field electron imaging shows an imbalance of misfit dislocations with opposite sign Burgers vector. An explanation for this tilt is given and it is suggested that it may be responsible for the improved quality of epitaxial layers grown on such pseudosubstrates.

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Novel TEM method for large-area analysis of misfit dislocation networks in semiconductor heterostructures

Cited by 2 publications

References 19 publications

Dislocation Analysis in SiGe Heterostructures by Large-Angle Convergent Beam Electron Diffraction

Dislocation Analysis in SiGe Heterostructures by Large-Angle Convergent Beam Electron Diffraction

Tilt generation in step-graded InxGa1−xAs metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer

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