Dislocation Analysis in SiGe Heterostructures by Large-Angle Convergent Beam Electron Diffraction

Abstract

Dislocations play a crucial role in self-organization and strain relaxation mechanisms in SiGe heterostructures. In most cases, they should be avoided, and different strategies exist to exploit their nucleation properties in order to manipulate their position. In either case, detailed knowledge about their exact Burgers vectors and possible dislocation reactions are necessary to optimize the fabrication processes and the properties of SiGe materials. In this review a brief overview of the dislocation mechanisms in the SiGe system is given. The method of choice for dislocation characterization is transmission electron microscopy. In particular, the article provides a detailed introduction into large-angle convergent-beam electron diffraction, and gives an overview of different application examples of this method on SiGe structures and related systems.

Real-Time TEM Observation of the Role of Defects on Nickel Silicide Propagation in Silicon Nanowires

“…TEM images of the Si NW before annealing (Figure S8a,b) show the presence of defects that appear as contrast lines along the NW. These line imperfections within the NW are characteristics of screw dislocations, twin boundaries, or stacking faults. − The presence of defects introduces localized strain into the lattice structure of the NW. The strain is further enhanced during the annealing experiment.…”

“…These line imperfections within the NW are characteristics of screw dislocations, twin boundaries, or stacking faults. 32 − 34 The presence of defects introduces localized strain into the lattice structure of the NW. The strain is further enhanced during the annealing experiment.…”