Tilt generation in step-graded InxGa1−xAs metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer

Ghanad-Tavakoli, Shahram; Hulko, O.; Thompson, David A.

doi:10.1063/1.2927498

Cited by 7 publications

(3 citation statements)

References 61 publications

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“…This might suggest a different mechanism of relaxation in this system, e.g. by increasing the defect density in the partially relaxed buried part of the MBL or creation of an extra crystallographic tilt. , Anyway, the choice of the parabolic Ga–In exchange curve to confine the defects close to the interface and the possibility to (over)compensate the built-up compressive strain in a full stack make these very useful tools for design engineering. The interchanging of compressive and tensile strained layers should/could also promote the bending of many of the remaining threading dislocations at interfaces, provided that the heteroepitaxial stress is high enough.…”

Section: Resultsmentioning

confidence: 99%

Section: Supporting Information For Exact Calculations For Samples E mentioning

confidence: 96%

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Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE

Gocalinska

Manganaro

Pelucchi

2016

Crystal Growth & Design

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We present a selection of stack designs for MOVPE grown In x Ga 1−x As metamorphic buffer layers following various convex-down compositional continuous gradients of the In content, showing that defect generation and strain can be managed in a variety of ways, some rather unexpected (and unreported). Indeed, we observe that it is possible to grow surprisingly thick tensile strained layers on metamorphic substrates, without significant relaxation and defect generation. We believe our findings give significant insights to the investigation of strain, relaxation, and defect distribution in metamorphic buffer design, so to obtain properly engineered/tailored structures (the most successful ones already finding applications in device growth).

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Section: Resultsmentioning

confidence: 99%

Section: Supporting Information For Exact Calculations For Samples E mentioning

confidence: 96%

Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE

Gocalinska

Manganaro

Pelucchi

2016

Crystal Growth & Design

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“…The dislocation formation velocity of α dislocations is higher than that of β dislocations; 9,26) thus, β1 and β2 dislocations are more significantly affected by α-dislocations than step edge restrictions. Another possible explanation is the difference in stiffness between the A and B steps, [27][28][29][30] which are perpendicular to [110] and ½ 110. B steps tend to wind while A steps tend to be straight.…”

Section: Resultsmentioning

confidence: 99%

Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction

Suzuki

Sasaki

Takahasi

et al. 2017

Jpn. J. Appl. Phys.

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The effect of substrate orientation on strain relaxation mechanisms of an InGaAs layer grown on vicinal GaAs substrates was investigated by in situ X-ray diffraction (XRD). The crystallographic tilt and indium segregation in the InGaAs layer were altered depending on the miscut direction and angle. In the case of the substrate tilted 6° toward the [110] direction, one type of misfit dislocations was formed preferentially rather than other types, especially in the rapid relaxation phase. While in the case of the substrate tilted 6° toward the direction, no anisotropies during relaxation were observed. The present finding indicates that the appropriate use of vicinal substrates may lead to a novel method of improving the crystal quality of heterolayers.

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Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs

et al. 2023

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We investigate different architectures for parabolic-graded InGaAs metamorphic buffers grown on GaAs using transmission electron microscopy techniques. The different architectures include InGaP and AlInGaAs/InGaP superlattices with different GaAs substrate misorientations and the inclusion of a strain balancing layer. Our results correlate: (i) the density and distribution of dislocations in the metamorphic buffer and (ii) the strain in the next layer preceding the metamorphic buffer, which varies for each type of architecture. Our findings indicate that the dislocation density in the lower region of the metamorphic layer ranges between 108 and 1010 cm−2, with AlInGaAs/InGaP superlattice samples exhibiting higher values compared to samples with InGaP films. We have identified two waves of dislocations, with threading dislocations typically located lower in the metamorphic buffer (~ 200–300 nm) in comparison to misfit dislocations. The measured localised strain values are in good agreement with theoretical predications. Overall, our results provide a systematic insight into the strain relaxation across different architectures, highlighting the various approaches that can be used to tailor strain in the active region of a metamorphic laser. Graphical abstract

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Tilt generation in step-graded InxGa1−xAs metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer

Cited by 7 publications

References 61 publications

Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE

Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE

Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction

Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs

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