Novel spin-on organic hardmask with high plasma etch resistance

Oh, Changil; Lee, Jin-Kuk; Kim, Min‐Soo; Yoon, Kisong; Cheon, Hwan‐Sung; Tokareva, Nataliya; Song, Jee-Yun; Kim, Jong-Seob; Chang, Tuwon

doi:10.1117/12.771758

Cited by 12 publications

(4 citation statements)

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“…We relied on condensation polymerization for the design of resins mainly because the condensation method has been proven to be effective in the development of spin-on carbon hardmasks. [9]~ [11] We imagined that if we used proper monomers, we could endow the polymer with good thermal stability. The flexibility in choosing monomers is especially valuable for the resin design.…”

Section: Resin Design: Condensation Polymerizationmentioning

confidence: 99%

Organic underlayer materials with exceptionally high thermal stability

Cheon¹,

Yoon²,

Kim³

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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Multilayer hardmask (MLHM) schemes have been implemented as an indispensable process for ArF lithography which continues to demand thinner photoresist films. There are many variations of MLHM and semiconductor manufacturers choose to adopt their own designs, depending on their specific needs and technical advances. The quad-layer stack consisting of photoresist, organic ARC, CVD Si hardmask, and spin-on carbon underlayer is one of them. Despite the need for wafer transporting between the spin track and CVD equipment, this scheme is attractive because it can avoid laborious elaboration of sophisticated etching chemistries for spin-on Si-ARC and carbon underlayer. One of the issues arising from the mixed film forming process is the thermal stability of carbon underlayer at high temperatures during the CVD process of the Si hardmask. Organic underlayer which shows high thermal stability is crucial for this mixed hardmask process. These types of thermally stable organic film can also be used for other applications such as the spacer patterning technique for pitch size shrinkage. In this paper, we discuss the development of organic resins with high thermal stability, their physical properties, and their lithographic behaviors in the MLHM schemes.

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Section: Resin Design: Condensation Polymerizationmentioning

confidence: 99%

Organic underlayer materials with exceptionally high thermal stability

Cheon¹,

Yoon²,

Kim³

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

Self Cite

View full text Add to dashboard Cite

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“…Therefore, the development of a sacrificial layer to achieve high selectivity in dry etching, called a “hardmask”, has become essential in the semiconductor fabrication process. 3–5…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the development of a sacricial layer to achieve high selectivity in dry etching, called a "hardmask", has become essential in the semiconductor fabrication process. [3][4][5] Amorphous carbon lms are promising candidates for nextgeneration hardmask materials for the following reasons. First, they are similar to PR and spin-on carbon, carbon-based materials compatible with semiconductor processes.…”

Section: Introductionmentioning

confidence: 99%

Effect of N doping on the microstructure and dry etch properties of amorphous carbon deposited with a DC sputtering system

et al. 2023

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“…Compared to the amorphous carbon layers (ACL) obtained using chemical vapor deposition (CVD) process, a spin-on process provides lower cost of ownership, less defectivity and better alignment accuracy [1][2][3][4]. In addition, SOC can provide good gap filling and planarization performance for severe topography depending on the SOC morphology and viscosity.…”

Section: Introductionmentioning

confidence: 99%

Progress in Spin-on Hard Mask Materials for Advanced Lithography

Padmanaban

Cho

Kudo

et al. 2014

J. Photopol. Sci. Technol.

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Hard masks used in lithography processes play a vital role in pattern transfer to the desired substrate. Hard mask materials can be categorized into organic and inorganic types. Examples of organic type hard masks include amorphous carbon, organo siloxane based materials with reflection control properties. These organic hard masks are deposited either by CVD process or spin-on processes. SiN, SiON and TiN are some examples of inorganic type hard masks and typically these hard masks are deposited through CVD process. In either type, key requirement is etch resistance to either oxygen rich plasma or halogen rich plasma depending on the substrate to be etched away. However, in the advanced lithography processes, in addition to good etch resistance, they also need to possess good wet removability, fill capability in high aspect ratio contacts and trenches. In this paper, we discuss the advances made in the spin-on organic and inorganic hard masks. The spin-on option provides high throughput and several alternate material options compared to CVD option. Spin-on carbon (SOC) is a high carbon containing polymer solution and as a coating material, the polymers need to be soluble in organic solvent and insoluble after curing for coating upper layer materials. Recent progress made in good filling, low outgas, high thermal stability and planarization properties required for double and quadruple patterning is presented. Similarly, novel spin-on type inorganic formulations providing Ti, W, and Zr oxide hard masks with high etch selectivity, wet removal capability and good shelf-life stability are described. These novel AZ ® Spin-on MHM formulations can be used in several new applications and can potentially replace any metal, metal oxide, metal nitride or silicon-containing hard mask films currently deposited using CVD process in the semiconductor manufacturing process.

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Novel spin-on organic hardmask with high plasma etch resistance

Cited by 12 publications

References 0 publications

Organic underlayer materials with exceptionally high thermal stability

Organic underlayer materials with exceptionally high thermal stability

Effect of N doping on the microstructure and dry etch properties of amorphous carbon deposited with a DC sputtering system

Progress in Spin-on Hard Mask Materials for Advanced Lithography

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