Effect of N doping on the microstructure and dry etch properties of amorphous carbon deposited with a DC sputtering system

Abstract

The importance of nitrogen in developing amorphous carbon hardmask with excellent performance, and physical and chemical properties to utilize in long-term etching is spotlighted due to the acceleration of development in high-density semiconductors.

Atomic spectrometry update: review of advances in the analysis of metals, chemicals and materials

“…Wallner et al determined U and Pu atom ratios in air lters from Austria, following measurement of 137 Cs and 241 Pu (via 241 Am) in the early 1960s. 190 A range of ratios were determined, with 233 U/ 236 U atom ratios within 0.15-0.49 × 10 −2 indicating that weapons testing in the early 1960s was not the source of 233 U. A compact 300 kV AMS instrument was used by Xing et al…”