Novel Snapback-Free Reverse-Conducting SOI-LIGBT With Dual Embedded Diodes

Zhang, Long; Zhu, Jun‐Jie; Sun, Weifeng; Meng, Chen; Zhao, Minna; Huang, Xuequan; Chen, Jiajun; Qian, Yuxiang; Shi, Longxing

doi:10.1109/ted.2017.2648851

Cited by 26 publications

(9 citation statements)

References 13 publications

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“…When JCE is -50 A/cm 2 , VF of the RC-Priority and FC-Priority is 0.11 V and 0.09 V lower than that of the conventional device (Wa/Wb = 4), respectively. Furthermore, as the RC current flows via a thyristor in the proposed device, rather than via two diodes in series in the dual embedded diodes LIGBT, the former exhibits an improved knee voltage of about 0.7 V which is half less than that for the latter (1.4 V) [10]. In the proposed device, the drift region could be fully and uniformly utilized by the bi-directional current.…”

Section: Simulation Parametersmentioning

confidence: 98%

“…The diode not only consumes extra chip area but also brings parasitic loss [5]. In order to address that, various structures, e. g., the LIGBT with shorted anode (SA) [6], separated shorted anode (SSA) [7,8], segmented trenches [9], dual embedded diodes [10] and dual-gate [11,12,13] are proposed. They all realize the reverse-conducting (RC) function but still have some defects.…”

Section: Introductionmentioning

confidence: 99%

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A novel snapback-free reverse-conducting (RC) SOI-LIGBT with a built-in thyristor

Lin

Cheng

et al. 2019

IEICE Electron. Express

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A novel reverse-conducting (RC) silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) is proposed. It features a built-in thyristor formed by introducing a floating P-well surrounding an N + collector. The realization of the thyristor barely increases chip area or complicates fabrication. It helps to realize the RC function and prevents the device from working in the unipolar mode, which eliminates the snapback problem. Moreover, since the thyristor provides an electron extraction path during the turn-off operation, the switching performance is improved. Simulation results show that, compared with the conventional LIGBT with an antiparallel diode, the proposed device presents the reverse recovery charge (Qrr) and the turnoff loss (Eoff) reduced by more than 30%, and the RC voltage drop (VF) decreased by about 0.1 V. key words: lateral insulated gate bipolar transistor (LIGBT), reverseconducting (RC), snapback-free Classification: Power devices and circuits This article has been accepted and published on J-STAGE in advance of copyediting. Content is final as presented.

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Section: Simulation Parametersmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

A novel snapback-free reverse-conducting (RC) SOI-LIGBT with a built-in thyristor

Lin

Cheng

et al. 2019

IEICE Electron. Express

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“…For the proposed RC-LIGBT, the V PN is much higher than that of the conventional because the N-buffer is vertically designed, and the snapback can be eliminated when N buffer is 5 × 10 15 cm −3 . N buffer =7T10 15 N buffer =5T10 15 conventional N buffer =1T10 16 N buffer =7T10 15 N buffer =5T10 15 Current density/AScm…”

Section: Snapback Characteristicsmentioning

confidence: 99%

“…[9][10][11][12] In recent years, several advanced structures have been proposed to solve this issue. [13][14][15][16][17][18] The snapback mechanisms and models were given by the voltage drop V PN of the P-collector/N-buffer junction. [19,20] The V PN model is an effective way to suppress the snapback by increasing the doping of the N-drift, but the breakdown voltage will be decreased due to the electric field.…”

Section: Introductionmentioning

confidence: 99%

A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design

Chen

Huang

et al. 2018

Chinese Phys. B

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A reverse-conducting lateral insulated-gate bipolar transistor (RC-LIGBT) with a trench oxide layer (TOL), featuring a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surface and bulk electric fields of the N-drift region, thus the breakdown voltage (BV) is improved. Secondly, the vertical N-buffer layer increases the voltage drop V PN of the P-collector/N-buffer junction, thus the snapback is suppressed. Thirdly, the P-body and the vertical N-buffer act as the anode and the cathode, respectively, to conduct the reverse current, thus the inner diode is integrated. As shown by the simulation results, the proposed RC-LIGBT exhibits trapezoidal electric field distribution with BV of 342.4 V, which is increased by nearly 340% compared to the conventional RC-LIGBT with triangular electric fields of 100.2 V. Moreover, the snapback is eliminated by the vertical N-buffer layer design, thus the reliability of the device is improved.

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“…The Segmented Trenches Anodes (STA) LIGBT can effectively suppress the snapback by increasing the anode resistance between the segmented P+ and N+ anodes [17]. The Dual Embedded Diode (DED) LIGBT can avoid the short effect by rerouting the electron current path through the embedded diode in the anode, thus the snapback is eliminated [18]. The SA LIGBT with Vertical P-collector and N-buffer (VPN) LIGBT can suppress the snapback by introducing the vertical PN junction in the anode, and the trade off between Von and Eoff can be optimized by adjusting the voltage VPN [19].…”

Section: Introductionmentioning

confidence: 99%

A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

Chen

Huang

et al. 2024

IEEE J. Electron Devices Soc.

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A novel snapback-free and fast-switching Shorted-Anode Lateral Insulated Gate Transistor (SA LIGBT) with Multiple Current P-Plugs (MCP) in anode, named MCP LIGBT, is proposed and investigated. The device features Multiple separated Current P-Plugs which are inserted in the N-buffer. At the forward conduction mode, the MCP act as the potential barrier to block the electrons flowing directly to the N+ anode, and the N-channels sandwiched between the MCP are fully depleted, which both increase the anode distributed resistance (RSA). In the turn off process, the N-channels provide three high-speed paths for minorities extraction, which reduces the turn off time. Consequently, the proposed device not only eliminates the snapback effect, but also achieves superior tradeoff between Eoff and Von. At the same

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Novel Snapback-Free Reverse-Conducting SOI-LIGBT With Dual Embedded Diodes

Cited by 26 publications

References 13 publications

A novel snapback-free reverse-conducting (RC) SOI-LIGBT with a built-in thyristor

A novel snapback-free reverse-conducting (RC) SOI-LIGBT with a built-in thyristor

A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design

A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

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