Novel process for integration of optoelectronic devices using reactive ion etching without chlorinated gas

Henry, L.; Granjoux, P.

doi:10.1049/el:19870870

Cited by 66 publications

(22 citation statements)

References 4 publications

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“…CH 4 /H 2 plasmas [13][14][15][16][17][18][19][20][21][22][23][24][25] have also been used as etchants for InP ever since they were first introduced by Niggebrugge and co-workers. 1-12 Due to the low volatility of indium chlorides, it is necessary to increase substrate temperatures ͑i.e., to above about 200°C͒ to prevent severe surface roughening.…”

Section: Introductionmentioning

confidence: 99%

Inductively coupled plasma etching of InP using CH4/H2 and CH4/H2/N2

Chen

Ruda

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Inductively coupled plasma etching of InP in CH 4 /H 2 and CH 4 /H 2 /N 2 gas mixtures was studied to understand the etching mechanisms and the influence of etching gas composition on etching rate, etching profile, and surface morphology. CH 4 /H 2 plasmas generally had higher etching rates than CH 4 /H 2 /N 2 plasmas. Deterioration of InP surfaces, following etching, reflected the preferential loss of P over In due to the diffusivity and reactivity of H being higher than CH 3 on InP surfaces, and also since PH 3 is more volatile than In(CH 3 ) 3 . In extreme circumstances, this can lead to the formation of In-rich droplets on the surface, with associated surface roughening. This was supported by the opposing trends of surface roughness ͑measured using atomic force microscopy͒ and P/In ratio ͑from x-ray photoelectron spectroscopy͒ as a function of the CH 4 gas concentration for CH 4 /H 2 gas mixtures. The addition of N 2 to the CH 4 /H 2 plasmas improved the surface morphology as N radicals reduced the rate of P removal by reacting with H radicals. However, an inevitable increase in the N ϩ and N 2 ϩ concentrations led to erosion of the SiO 2 masks and caused sloping sidewalls.

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Section: Introductionmentioning

confidence: 99%

Inductively coupled plasma etching of InP using CH4/H2 and CH4/H2/N2

Chen

Ruda

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…CH 4 /H 4 plasmas [13][14][15][16][17][18][19][20][21][22][23][24][25] were used extensively as alternative etchants for InP ever since they were first introduced by Niggebrugge and co-workers. Due to the low volatility of indium chlorides, it is necessary to increase the substrate temperature ͑i.e., to in excess of 200°C͒ to prevent severe surface roughening.…”

Section: Introductionmentioning

confidence: 99%

Inductively coupled plasma etching of InP using N2/H2

Chen

Ruda

Navarro³

2001

Journal of Applied Physics

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“…H 2 and CH 4 are easier to handle, less toxic, less corrosive, and more environment friendly than halocarbon gasses ͑especially after abate-ment͒. They have been used in RIE for a range of semiconducting compounds such as groups III-V, [41][42][43] II-VI, 44,45 and IV-VI. 46…”

Section: B Ch 4 /H 2 / Ar Based Etching Of Teomentioning

confidence: 99%

Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

Madden

2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The authors report in detail on the reactive plasma etching properties of tellurium and demonstrate a high quality etching process using hydrogen, methane, and argon. Very low loss planar ridge waveguides are demonstrated. Optical losses in tellurium dioxide waveguides below 0.1 dB/cm in most of the near infrared region of the electromagnetic spectrum and at 1550 nm have been achieved-the lowest ever reported by more than an order of magnitude and clearly suitable for planar integrated devices. The etch process is also shown to be suitable for chalcogenide glasses which may be of importance in applications such as phase change memory devices and nonlinear integrated optics.

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Novel process for integration of optoelectronic devices using reactive ion etching without chlorinated gas

Cited by 66 publications

References 4 publications

Inductively coupled plasma etching of InP using CH4/H2 and CH4/H2/N2

Inductively coupled plasma etching of InP using CH4/H2 and CH4/H2/N2

Inductively coupled plasma etching of InP using N2/H2

Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

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