Novel NICE (nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0.25 μm dual gate CMOS

Kuroi, T.; Hamaguchi, Takashi; Shirahata, Masayoshi; Okumura, Y.; Kawasaki, Yoji; Inuishi, M.; Tsubouchi, N.

doi:10.1109/iedm.1993.347342

Cited by 11 publications

(6 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…HE incorporation of nitrogen into the gate-dielectrics of T MOS devices by different processes has been widely investigated to improve the reliability of MOSFET's [ 11- [6]. The improved reliability is mainly due to thie fact that most of the incorporated nitrogen can pile up at the gate-SiOZ/Si interface to make the interface more robust and then to improve the hot-carrier immunity.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Characteristics of top-gate thin-film transistors fabricated on nitrogen-implanted polysilicon films

Yang

Lei

Lee

1995

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

A bstruct-The electrical characteristics of lop-gate thin-film transistors (TFT's) fabricated on the nitrogen-implanted polysilicon of the doses ranging from 2 x 101'-2 x loL4 ions/cm2 were investigated in this work. The experimental results showed that nitrogen implanted into polysilicon followed by an 850" C 1 h annealing step had some passivation effect and this effect was much enhanced by a following Hz-plasma treatment. The threshold voltages, subthreshold swings, ON-OFF current ratios, and field effect mobilities of both n-channel and p-channel TFT's were all improved. Moreover, the hot-carrier reliability was also improved. A donor effect of the nitrogen in polysilicon was also found which affected the overall passivation effect on the p-channel TFT's.

show abstract

Section: Introductionmentioning

confidence: 99%

“…Recently, Nz0-annealed oxides have also become a promising alternative due to its process simplicity [ 3 ] , [4]. In addition, nitrogen ion implantation is another alternative to suppress the bloron penetration and hot-carrier degradation of MOSFET's [5], [6].…”

Section: Introductionmentioning

confidence: 99%

Characteristics of top-gate thin-film transistors fabricated on nitrogen-implanted polysilicon films

Yang

Lei

Lee

1995

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…Several methods, including nitridation, were reported to suppress the penetration. [4][5][6][7][8][9][10][11] Many investigators have reported various instabilities related to boron-doped poly-silicon gate MOS structures. [12][13][14][15][16][17] Faggin et al 12 showed that the threshold voltage of MOS transistors shifts negatively when the gate voltage is positively biased.…”

Section: Introductionmentioning

confidence: 99%

Current increase in thin gate-oxide (3.5–7.0 nm) metal–oxide–silicon structures with the boron-doped polycrystalline-silicon gates biased negatively

Itsumi

Satō

Nakayama

et al. 1997

Journal of Applied Physics

View full text Add to dashboard Cite

We have investigated gate-current instability in boron-doped polycrystalline-silicon gate metal–oxide–silicon structures. Gate-current increase is observed only for oxide thicknesses of 3.5–7.0 nm and for negative gate voltage. The current-increase characteristics are reversible for positive and negative bias cycles. When the gate is negatively or positively biased, the flatband voltage remains constant, suggesting that there is no positive charge buildup at the Si–SiO2 interface. The experimental results suggest that a positive charge buildup or the formation of a conductive region at the gate–SiO2 interface is involved in the current increase. A model for this current instability is presented.

show abstract

“…5,6 Nitrogen implantation has recently received increasing attention in the fabrication of deep submicrometer devices. 7 Nitrogen was implanted ͑i͒ into poly-Si gates to suppress boron penetration, [8][9][10][11] ͑ii͒ into junctions to improve the junction leakage, 12,13 and ͑iii͒ into substrates to enhance n-channel metal oxide semiconductor field effect transistor ͑n-MOSFET͒ device performance. [12][13][14][15] The hot carrier resistance of both n-and p-MOSFETs was also found to be capable of substantial improvement by incorporating nitrogen in the gate oxide by implanting it through a polysilicon gate.…”

mentioning

confidence: 99%

“…[12][13][14][15] The hot carrier resistance of both n-and p-MOSFETs was also found to be capable of substantial improvement by incorporating nitrogen in the gate oxide by implanting it through a polysilicon gate. 11 This work describes a high performance and reliable deep submicrometer n-MOSFET with ultrathin gate oxide prepared by combining nitrogen gate electrode implantation and native-oxide-free in situ HF vapor preoxidation cleaning. Additional in situ HF vapor cleaning and the transfer of wafers in the closed ambient can reduce the regrowth of native oxide and improve surface roughness.…”

mentioning

confidence: 99%

Nitrogen Implantation and In Situ HF Vapor Clean for Deep Submicrometer n-MOSFETs

Chen

Lei

Chen

et al. 2002

J. Electrochem. Soc.

View full text Add to dashboard Cite

This work describes a high performance and reliable deep submicrometer n-channel metal oxide semiconductor field effect transistor ͑n-MOSFET͒ with ultrathin gate oxide prepared by combining nitrogen gate electrode implantation and native-oxidefree in situ HF vapor preoxidation cleaning. The results herein reveal that the performance and reliability, including the leakage current of the ultrathin gate oxide, charge-to-breakdown, drain current, transconductance, charge pumping current, stress induced leakage current, and hot carrier reliability of n-MOSFETs are all significantly improved. The enhanced reliability and performance are attributed to the native-oxide-free process, smooth interface, and reduced incorporation of As in the gate oxide which results from HF vapor cleaning and nitrogen implantation.The reliability challenges of ultrathin gate oxide are becoming increasingly greater for deep submicrometer complementary metal oxide semiconductors ͑CMOS͒ devices. 1,2 As the gate oxide thickness scales down, causing soft breakdown and direct tunneling effects, removal of the native oxide prior to gate oxidation becomes critical. Hence, the HF vapor clean and in situ native oxide desorption process have been investigated extensive. 3,4 The postoxidation anneal ͑POA͒ and/or oxynitridation process may enhance the trapping and hot carrier immunity properties of gate oxides by improving interface smoothness and/or increasing interfacial nitrogen concentration. 5,6 Nitrogen implantation has recently received increasing attention in the fabrication of deep submicrometer devices. 7 Nitrogen was implanted ͑i͒ into poly-Si gates to suppress boron penetration, 8-11 ͑ii͒ into junctions to improve the junction leakage, 12,13 and ͑iii͒ into substrates to enhance n-channel metal oxide semiconductor field effect transistor ͑n-MOSFET͒ device performance. [12][13][14][15] The hot carrier resistance of both n-and p-MOSFETs was also found to be capable of substantial improvement by incorporating nitrogen in the gate oxide by implanting it through a polysilicon gate. 11 This work describes a high performance and reliable deep submicrometer n-MOSFET with ultrathin gate oxide prepared by combining nitrogen gate electrode implantation and native-oxide-free in situ HF vapor preoxidation cleaning. Additional in situ HF vapor cleaning and the transfer of wafers in the closed ambient can reduce the regrowth of native oxide and improve surface roughness. Furthermore, the device will benefit from low arsenic incorporation at the oxide/silicon interface in the nitrogen implantation samples. Consequently, the performance and reliability is significantly improved, including the leakage current of ultrathin gate oxide, chargeto-breakdown (Q bd ), the drain current (I d ), transconductance (G m ), charge pumping current (I cp ), stress induced leakage current ͑SILC͒, and hot carrier reliability of n-MOSFETs with 4 nm thin gate oxides. ExperimentalThe gate oxidations and polysilicon deposition were performed in the Advance 400 ͑ASM A400/3͒, a clus...

show abstract

Novel NICE (nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0.25 μm dual gate CMOS

Cited by 11 publications

References 4 publications

Characteristics of top-gate thin-film transistors fabricated on nitrogen-implanted polysilicon films

Characteristics of top-gate thin-film transistors fabricated on nitrogen-implanted polysilicon films

Current increase in thin gate-oxide (3.5–7.0 nm) metal–oxide–silicon structures with the boron-doped polycrystalline-silicon gates biased negatively

Nitrogen Implantation and In Situ HF Vapor Clean for Deep Submicrometer n-MOSFETs

Contact Info

Product

Resources

About