Novel multilayered Ti/TiN diffusion barrier for Al metallization

Wu, Wen Fa; Tsai, Kou Chiang; Chao, Chin-Jung; Chen, Jen Chung; Ou, Keng Liang

doi:10.1007/s11664-005-0244-9

Cited by 29 publications

(13 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fig. 5(d) shows that each 40-nm-thick TiN layer was separated by a 10-nm-thick Ti layer in the Ti/TiN composite structure of the TiN_M sample; this failed to facilitate grain growth in the crystallized structures [7]; thus, small grains were observed. The magnified cross-sectional SEM pictures of TiN_S and TiN_M were shown in Fig.…”

Section: Layermentioning

confidence: 99%

“…A titanium (Ti) metal film acting as an adhesion layer with tensile strain has typically been used to balance the compressive stress. Therefore, to develop further improvements to the CIGS/SS solar cell, a combination of a Ti/TiN composite diffusion barrier layer was adopted in this study to increase thin-film adhesion, and it also protected the device from characteristic deterioration caused by the diffusion of Fe ions [6,7] The usage of a Ti/TiN composite diffusion barrier layer in this study can also contribute to the reduced thickness of the Mo back contact which was thought advantageous in the reduced Fe ion diffusion and the fabrication cost. The CIGS/SS solar cells with the Ti/ TiN composite diffusion barrier layer demonstrated an optimal conversion efficiency of 8.9% without requiring antireflective coating, which is a value comparable to that of 9.1% of CIGS cells fabricated on soda-lime glass (SLG) substrates.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Developing flexible CIGS solar cells on stainless steel substrates by using Ti/TiN composite structures as the diffusion barrier layer

Liu

et al. 2015

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Layermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Developing flexible CIGS solar cells on stainless steel substrates by using Ti/TiN composite structures as the diffusion barrier layer

Liu

et al. 2015

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…The MOSCAP structure consists of 50x50um^2 trenches filled with interfacial layer (IL), HfO2 high-k (HK) film, HK cap TiN, WF metals. Figure 4 shows typical C -V curves with NMOS/TiAl and PMOS/TiN WF metals respectively [2][3] . From the C -V …”

Section: Work Function Tuning Challengesmentioning

confidence: 99%

Thin Film Challenges in 28nm Technology Node

Zhang

Bin²,

Xiao³

et al. 2012

ECS Trans.

View full text Add to dashboard Cite

During 28nm technology node process development, a couple of dozens new thin films and advanced thin film processes have been introduced to meet needs of the CMOS circuit performance. These new films and processes are used for micro-patterning, gap-fill, high-k metal gate (HKMG) work function metals and electrodes, electrical and reliability performance, etc. This article shall report the latest progress in thin film developments at the leading Chinese semiconductor company, SMIC. Some key challenges in the areas mentioned above will be elaborated and various new thin film requirements will be discussed. Examples of some thin film process developments, especially in the micro-patterning, Metal Gate and STI and ILD gap-fill, and HKMG work function tuning, will be provided, and the preliminary results will be presented. Step Coverage and/or Gap-Fill ChallengesSatisfactory step coverage and successful gap-fills have been achieved at STI, metal gate (MG) 1 , contact ILD, and M1/Mx Cu interconnects, the four critical areas of IC fabrication. In the TaN/Ta Cu barrier process, increased side-wall step coverage is usually required for better reliability, and relatively reduced bottom coverage is required for lower Cu via resistance. In contrast, the step coverage requirements for a CMOS work function (WF) metal, TiAl in NMOS as an example, is reversed and a much reduced sidewall coverage is preferred to benefit the MG gap-fill complex. A flattened bottom PVDTiAl film, rather than a dome shaped one, which is against the PVD process nature, must be obtained to eliminate its negative impact on the Vt variation. The MG trench entrance damage needs to be well controlled to form an acceptable incoming profile in the subsequent gap-fill. This flat bottom step coverage requirement in the TiAl film has raised new challenges for PVD sputtering. An experimental DOE was carried out to carefully tune the gas pressure, power, bias/source power ratio, etc, so that desired TiAl step coverage and subsequent void-free gap-fill were obtained, however, the gap-fill physical images are purposely not present here.Generically STI gap-fill is always challenging due to its high aspect ratio (AR). At 28nm, the gap-fill aspect ratios (AR) is 6 -7 when its patterning hard mask (HM) films are taken into account and the STI trench target CD is at ~ 60nm. Figure 1 below shows a typical incoming STI trench profile. For a complete gap-fill, it is necessary to have a HM recess by a wet chemical to widen the STI trench opening, followed by a deposition of ~ 200A oxide liner film. After the liner film, a commercially available SiCoNi dry etch

show abstract

“…TiC and TiN coatings are commonly deposited as thin films to improve the properties of use, the hardness and the corrosion resistance of cutting tools [1,2] as well as diffusion barrier layers in microelectronic devices [3][4][5]. The physical properties of these compounds are mainly dependent on the stoichiometry, thus it is highly important to determine precisely their true composition.…”

Section: Introductionmentioning

confidence: 99%