In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm), carrier concentration (4.1 × 1021 cm−3), carrier mobility (10 cm2/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3) with a high figure of merit (81.1 × 10−3 Ω−1) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

No abstract

No abstract

This study examines the use of a diffusion barrier layer of Ti/TiN composite structures on 430 SS substrates. Secondary ion mass spectrometer (SIMS) measurements indicated that the Ti/TiN composite structure efficiently blocked Fe diffusion. An appropriate composition of sodium (Na) in the CIGS absorption layer improved the open-circuit voltage and fill factor (FF) in CIGS solar cells. An optimal conversion efficiency of 7.4% was achieved without using antireflective coating.