Indium tin oxide with titanium doping for transparent conductive film application on CIGS solar cells

Liu, Wei Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Li, Ying-Tse; Huang, Shi-Da; Yu, Hau-Wei; Pu, Nen-Wen; Liang, Shih-Chang

doi:10.1016/j.apsusc.2015.02.130

Cited by 17 publications

(4 citation statements)

References 25 publications

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“…These methods include substrate-heating during the thin-film deposition [9], and post-growth thermal annealing [10], which can effectively improve the crystallinity and optoelectronic properties of TCO thin films. During the fabrication of TCO films with high carrier mobility, transition-metal elements, such as Ti, Mo, W and Nb, are typically doped into indium oxide (In 2 O 3 ), improving their optoelectronic characteristics considerably [11,12,13,14]. …”

Section: Introductionmentioning

confidence: 99%

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

Liu

Cheng

et al. 2015

Materials

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In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm), carrier concentration (4.1 × 1021 cm−3), carrier mobility (10 cm2/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3) with a high figure of merit (81.1 × 10−3 Ω−1) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

Liu

Cheng

et al. 2015

Materials

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“…As the ionic radiuses of Titanium (Ti 4+ ), tin (Sn 4+ ) and indium (In 3+ ) are 0.06, 0.07 and 0.09 nm, respectively [27], the small ionic radiuses of Sn 4+ and Ti 4+ imply that the crystalline structure may not change if these elements are used as dopant inIn 2 O 3 and/or ITO frameworks. As such, we postulate that enhancing the preferred orientation and enhancing the crystal growth of the 3-d metal-doped ITO thin films could be attributed to the introduction of Ti as a dopant [28,29]. Figures 2 and 3 also show that for both ITO and Tidoped ITO films the (222) and (400) peaks around 30.5°and 35.2°, respectively, featureprominently.…”

Section: Structural Propertiesmentioning

confidence: 80%

Improving the optoelectronic properties of titanium-doped indium tin oxide thin films

Taha

Jiang

Henry

et al. 2017

Semicond. Sci. Technol.

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The focus of this study is on a sol-gel method combined with spin-coating to prepare highquality transparent conducting oxide (TCO) films. The structural, morphological, opticaland electrical properties of sol-gel-derived pure and Ti-doped indium tin oxide (ITO) thin films were studied as a function of the concentration of the Ti (i.e.0at%, 2at% and 4 at%) and annealing temperatures (150°C-600 °C). FESEM measurements indicate that all thefilms are∼350 nm thick. XRD analysis confirmed the cubic bixbyite structure of the polycrystalline indium oxide phase for all of the thin films. Increasingthe Ti ratio, as well as the annealing temperature, improved the crystallinity of the films. Highly crystalline structures were obtained at 500 °C, with average grain sizes of about 50, 65 and 80 nm for Ti doping of 0 at%, 2 at% and 4 at%, respectively. The electrical and optical properties improved as the annealing temperature increased, with an enlarged electronic energy band gap and anoptical absorption edge below 280 nm. In particular, the optical transmittance and electrical resistivity of the samples with a 4 at% Ti content improved from 87% and 7.10×10 −4 Ω.cm to 92% and 1.6×10 −4 Ω.cm, respectively. The conductivity, especially for the annealing temperature at 150 °C, is acceptable for many applications such as flexible electronics. These results demonstrate thatunlike the more expensive and complex vacuum sputtering process, high-quality Ti-doped ITO films can be achieved byfast processing, simple wet-chemistry, and easy doping level control with the possibility of producing films with high scalability.

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“…During annealing the adatoms gain additional energy resulting in an increased mobility. This enables grain growth and crystallization [32][33][34]. The grain sizes of as-deposited and annealed IAAI films were calculated using the Scherrer equation,…”

Section: Resultsmentioning

confidence: 99%

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

Isiyaku¹,

Ali²,

Nayan³

2020

Beilstein J. Nanotechnol.

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Indium tin oxide (ITO) is a widely used material for transparent conductive oxide (TCO) films due to its good optical and electrical properties. Improving the optoelectronic properties of ITO films with reduced thickness is crucial and quite challenging. ITO-based multilayer films with an aluminium–silver (Al–Ag) interlayer (ITO/Al–Ag/ITO) and a pure ITO layer (as reference) were prepared by RF and DC sputtering. The microstructural, optical and electrical properties of the ITO/Al–Ag/ITO (IAAI) films were investigated before and after annealing at 400 °C. X-ray diffraction measurements show that the insertion of the Al–Ag intermediate bilayer led to the crystallization of an Ag interlayer even at the as-deposited stage. Peaks attributed to ITO(222), Ag(111) and Al(200) were observed after annealing, indicating an enhancement in crystallinity of the multilayer films. The annealed IAAI film exhibited a remarkable improvement in optical transmittance (86.1%) with a very low sheet resistance of 2.93 Ω/sq. The carrier concentration increased more than twice when the Al–Ag layer was inserted between the ITO layers. The figure of merit of the IAAI multilayer contact has been found to be high at 76.4 × 10−3 Ω−1 compared to a pure ITO contact (69.4 × 10−3 Ω−1). These highly conductive and transparent ITO films with Al–Ag interlayer can be a promising contact for low-resistance optoelectronics devices.

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Indium tin oxide with titanium doping for transparent conductive film application on CIGS solar cells

Cited by 17 publications

References 25 publications

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

Improving the optoelectronic properties of titanium-doped indium tin oxide thin films

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

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