Novel Molecular Resist for EUV and Electron Beam Lithography

Frommhold, Andreas; Yang, Dongxu; McClelland, Alexandra; Roth, John R.; Xue, Xuan; Rosamund, Mark C.; Linfield, Edmund H.; Robinson, Alex P. G.

doi:10.2494/photopolymer.28.537

Cited by 9 publications

(6 citation statements)

References 12 publications

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“…(a) Comparison of various EUV resists design principles, such as CARs, 62 – 69 multitriggers, 70 – 73 n-CARs, 74 , 75 inorganics, 76 , 77 poly-HSQ, 78 and MOCs, 79 – 82 based on sensitivity towards EUVL and (b) pictorial representation of ultra-high EUV sensitive (2.3 mJ/cm2) of developed In-MAA MOC resists for many folds augmentation of fab-out wafers throughput of next-generation EUVL technology.…”

Section: Resultsmentioning

confidence: 99%

“…where k is associated with the factors related to the optical losses that occur due to the presence of reflective mirrors in the optical route of the EUV light, 83 E D is dose-to-set for negative tone Fig. 6 (a) Comparison of various EUV resists design principles, such as CARs, [62][63][64][65][66][67][68][69] multitriggers, [70][71][72][73] n-CARs, 74,75 inorganics, 76,77 poly-HSQ, 78 and MOCs, [79][80][81][82] resists, P is the power of the EUVL source, and T th is the throughput of the EUVL system (wafers per hour). Here, Eq.…”

Section: Mechanistic Analysis Of In-maa Mocs Resist Formulationmentioning

confidence: 99%

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Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

Chauhan

Palit

Choudhary

et al. 2022

J. Micro/Nanopattern. Mats. Metro.

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Background: An incredible increase in the integration of electronic chips has pushed the semicon industries to endorse high numerical aperture (h-NA ∼ 0.5), extreme-ultraviolet (EUV) lithography (EUVL) (λ ∼ 13.5 nm) at the commercial scale. Induction of h-NA postulates EUV resists that could outperform the resolution, line pattern roughness, and sensitivity (RLS) tradeoff for chip fabricators, which is currently extremely limited. Aim:The development of EUV resist to balance RLS trade-off as well as overcome throughput limitations of h-NA EUV system to facilitate high volume semiconductor manufacturing.Approach: Here, we developed indium-methacrylic acid-based metal-organic clusters resist for h-NA, EUVL. To examine the h-NA single exposure patterning potential of the resist, prescreening by sub-10 nm next-generation lithography (NGL) tools such as electron beam lithography (EBL), and helium ion beam lithography (HIBL) were conducted as a prelude to EUV exposure.Results: Dense ∼13 nm, (l/s) patterns at ∼45 and ∼30 μC∕cm 2 were well resolved by EBL and HIBL, on the top this the line edge roughness (LER) was 2.48 AE 0.04 nm, and etch resistance ∼1.98 and ∼0.34 times lower than Si and SiO 2 ∕Si systems. Also, In-MAA MOCs resist shows ultra-sensitivity of 2.3 mJ∕cm 2 towards h-NA EUVL for patterning up to 26 nm half-pitch line patterns with LER ∼2.36 AE 0.16 nm.

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Section: Resultsmentioning

confidence: 99%

Section: Mechanistic Analysis Of In-maa Mocs Resist Formulationmentioning

confidence: 99%

Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

Chauhan

Palit

Choudhary

et al. 2022

J. Micro/Nanopattern. Mats. Metro.

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“…They optimized the performance of this system at 14 nm hp by 50% using a new quencher. Furthermore, dose improvements up to 60% was observed using metals as additives [78,79]. Irresistible materials Ltd. developed negative resist materials based on a multi-trigger concept.…”

Section: Molecular Chemically Amplified Systemsmentioning

confidence: 99%

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

2020

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The need for decreasing semiconductor device critical dimensions at feature sizes below the 20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) lithography with exposure at 13.5 nm as the main next generation lithographic technology. The broad consensus on this direction has triggered a dramatic increase of interest on resist materials of high sensitivity especially designed for use in the EUV spectral region in order to meet the strict requirements needed for overcoming the source brightness issues and securing the cost efficiency of the technology. To this direction both fundamental studies on the radiation induced chemistry in this spectral area and a plethora of new ideas targeting at the design of new highly sensitive and top performing resists have been proposed. Besides the traditional areas of acid-catalyzed chemically amplified resists and the resists based on polymer backbone breaking new unconventional ideas have been proposed based on the insertion of metal compounds or compounds of other highly absorbing at EUV atoms in the resist formulations. These last developments are reviewed here. Since the effort targets to a new understanding of electron-induced chemical reactions that dominate the resist performance in this region these last developments may lead to unprecedented changes in lithographic technology but can also strongly affect other scientific areas where electron-induced chemistry plays a critical role.

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“…Up to now, most of molecular resists are chemically amplified positive-tone type based on polyphenolic cores or rings with protection of acid-labile groups [31][32][33][34][35][36]. In this work, a cross-linkable, organic, molecular resist platform is developed with dose-to-size well below 50mJ/cm 2 .…”

Section: Introductionmentioning

confidence: 99%

Negative-tone resists for EUV lithography

Kim

Her

Wu³

et al. 2023

Advances in Patterning Materials and Processes XL

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The adoption of extreme ultraviolet lithography (EUVL) has enabled the manufacturing of semiconductor chips with circuit dimensions below 20nm. Photoresists used in the current EUVL are based on the extension of polymeric chemically amplified photoresist system initially introduced three decades ago. While having been the industry's workhorse since the deep UV era, its limitations have begun to emerge too. With requirements for line edge roughness (LER) approaching single nanometer and resolution falling below 15nm, the inherent large scale and inhomogeneity of polymeric systems lead to great technical challenges. Miniaturization of the building blocks of photoresist is desired for further scaling. In the meanwhile, the demand for higher throughput in lithography process due to the restriction of EUV source power requires faster photo-speed as well. In this study, a molecular resist platform is developed with the superior dose-to-size well below 50mJ/cm2. The resist forms negative-tone images which is beneficial for printing pillars and isolated lines utilizing dark-field masks. Pillars in hexagonal arrays with pitch below 38nm are patterned with local CD uniformity (LCDU) below 3nm. Thanks to its negative-tone nature, top loss of the resist film is minimal, which results in higher remaining film to sustain the subsequent etch process. The robust design of the molecular core renders the resist film enhanced etch resistance. Pattern transferring into over 15nm silicon layer was demonstrated using a simple stack. The new resists offer a more straightforward solution to print pillars and similar features without tone-inversion process. The negative-tone resists can be combined with the DSA technology to significantly improve cost of ownership. The processes were successfully implemented for both contact hole and line/space patterns with drastically improved pattern quality. LCDU of 1.4nm was achieved for contact hole pattern at pitch of 34nm in hexagonal array. It could be considered as an alternative to EUV double patterning or high-NA EUV processes.

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Novel Molecular Resist for EUV and Electron Beam Lithography

Abstract: A novel molecular resist molecule was prepared by incorporation of 1,8-diazabicycloundece-7-ene into a tert-butyloxycarbonyl protected phenol malonate group. The resist shows high-resolution capability in both extreme ultraviolet (EUV) and electron beam lithography.

Cited by 9 publications

References 12 publications

Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

Negative-tone resists for EUV lithography

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