Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)

Abstract

A novel low leakage and low resistance titanium salicide process named “ silicidation after ion implantation through the contamination- restrained oxygen free LPCVD- nitride layer (SICRON)” has been developed. This novel oxygen free process has been successfully implemented in deep submicron dual gate CMOS (complementary metal oxide semiconductor) development. Junction leakage current for TiSi2-n+/p and -p+/n was reduced to the non-silicidation level. Furthermore, low sheet resistances of n+-and p+-gate electrode were maintained below the 0.2 µm line.