A low resistance and thermally stable TiSi2 self aligned silicide (SALICIDE) for deep submicron p+ and n+ dual gate complementary metal-oxide semiconductors (CMOS) has been developed. This was achieved through the use of a novel oxygen free silicidation (OFS) process using a reaction between a titanium included nitrogen ( Ti
x
N
y
) and an oxygen free poly-Si-gate. The oxygen free poly-Si was realized using low pressure chemical vapor deposition (LPCVD) system with nitrogen flow Load-Lock chamber. The OFS TiSi2 film did not agglomerate after the treatment of the RTA at 1050° C for 20 s in a N2 atmosphere and the additional furnace annealing at 900° C for 30 min. in a N2 atmosphere. For both n+ and p+ gates, low sheet resistances (about 2.8 Ω /square.) were achieved under the 0.2 µ m size.
A novel low leakage and low resistance titanium salicide process named “ silicidation after ion implantation through the contamination- restrained oxygen free LPCVD- nitride layer (SICRON)” has been developed. This novel oxygen free process has been successfully implemented in deep submicron dual gate CMOS (complementary metal oxide semiconductor) development. Junction leakage current for TiSi2-n+/p and -p+/n was reduced to the non-silicidation level. Furthermore, low sheet resistances of n+-and p+-gate electrode were maintained below the 0.2 µm line.
A novel low leakage, low resistance and high temperature stability titanium salicide process named "S ilicidation after ion implantation through the -Contamination-Restrained Oxygen free LPCVD-Nitride layer in a Lightly Doped diffusion layer (LD-SICRON)" has been developed. This novel LD-SICRON process has been successfully implemented in deep submicron dual gate CMOS development. Junction leakage current for TiSi~-n+/p and -p+/n was reduced to the non-silicidation level (area component: 0.8-3.6 nA/cm2, peripheral component: 3.1-3.6 pA/cm). Low sheet resistances of n+-and p+-gate electrodes (4 Wsquare) were maintained below the 0.2 pm line even after high temperature annealing (lOOO°C, 10 sec + 850"C, 30 min.).
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