Novel highly miniaturized multi-stress sensor field effect transistor with eight source/drain terminals

Doelle, M.; Bartholomeyczik, J.; Ruther, Patrick; Oliver, Paul

doi:10.1109/sensor.2005.1496421

Cited by 9 publications

(6 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In contrast, the structures in Figs. 16(c) and (d) are field effect transistors (FETs), where carrier transport and piezoresistive effects occur in the inversion layer [18,69]. Their peripheral contacts are source/drain contacts serving for biasing the structure and monitoring the Fermi level of the inversion carriers.…”

Section: Pseudo-hall Effect Devicesmentioning

confidence: 99%

Advanced silicon microstructures, sensors, and systems

Oliver

Gaspar

Ruther

2007

IEEJ Transactions Elec Engng

View full text Add to dashboard Cite

This paper presents the progress in silicon-based biomedical microstructures, material characterization techniques, and mechanical microsystems by the authors' research team. Microneedle and microelectrode arrays with fluidic through-wafer vias and electrical contacts were developed. The structures are designed for dermatological and biological applications such as allergy testing, surface electromyography, and spatially resolved impedance spectroscopy. The characterization of thin films has relied on the bulge test. By the formulation of more powerful models, the application range of the bulge test was extended to elastically supported thin-film multilayers. This enables the mechanical properties of thin films to be determined reliably. Finally, progress in the operation and application of novel stress sensors based on CMOS diffusions and field effect transistors and exploiting the pseudo-Hall effect is reported. Their integration into powerful single-chip microsystems is described. Applications include stress mapping, force and torque measurements, and tactile surface probing of microcomponents. 

show abstract

Section: Pseudo-hall Effect Devicesmentioning

confidence: 99%

Advanced silicon microstructures, sensors, and systems

Oliver

Gaspar

Ruther

2007

IEEJ Transactions Elec Engng

View full text Add to dashboard Cite

show abstract

“…Due to the sizeable piezoresistive coefficients of silicon [20], [21] a variety of CMOS compatible stress sensors have been developed [22], such as piezoresistive sensor rosettes [23], piezo-FET [24]. Some of these sensors are even capable of sensing several independent stress components [25], [26].…”

Section: A Cmos Stress Sensorsmentioning

confidence: 99%

Package Stress Monitor to Compensate for the Piezo-Hall Effect in CMOS Hall Sensors

Huber¹,

Schott²,

Oliver

2013

IEEE Sensors J.

View full text Add to dashboard Cite

Package-induced stress changes the sensitivity of planar Hall plates via the piezo-Hall effect. In this paper, we present a novel stress sensor that allows us to compensate for this undesired mechanical cross-sensitivity. The new CMOScompatible sensor is based on a Wheatstone bridge built of eight appropriately arranged n-and p-doped piezoresistors. The differential output signal V bridge of the sensor is proportional to the sum of in-plane normal stresses σ x x +σ yy with the sensitivity S bridge,σ = ∂ V bridge / V bias /∂ σ x x + σ yy = −0.047GPa −1 . Doping concentrations larger than 10 19 cm −3 for both the n-and p-type resistors are used to minimize the parasitic resistor mismatch due to the junction field effect. Simultaneously, the highly doped resistors keep the relative thermal cross-sensitivity of the sensor as small as 74 ppm K −1 . In contrast to conventional sensor rosettes, the new sensor has the advantage of offering a differential output signal. The measured signal is successfully used to decrease the stress-impact on the sensitivity of CMOS Hall sensors by a factor of five.

show abstract

“…They benefit from the gate electrode as an intrinsic switch, which reduces the complexity of the multiplexing circuitry, and from a reduced temperature dependence of their piezoresistive coefficients [8 -11]. FETs with four and eight contact diffusions were presented in the past [12,13]. In four-contact devices two opposite contacts act as conventional source and drain diffusions whereas the stress dependent voltage Vout, in this case also termed pseudo-Hall voltage, is measured between the two remaining contact diffusions.…”

Section: Introductionmentioning

confidence: 99%

Novel method to operate piezo-FET-based stress sensor offers tenfold increase in sensitivity

et al. 2015

Self Cite

View full text Add to dashboard Cite

This paper presents a novel method to operate Wheatstone bridges of piezoresistive field effect transistors (FETs) as stress sensors. Such structures consist of a square arrangement of four FETs connected by the source/drain diffusion in each corner. When the FETs are on and the bridge is operated with an input voltage between a pair of opposite contacts, the bridge output voltage appearing between the perpendicular contact pair is proportional to the difference of in-plane normal stress components. In the new method the resistivity of one of the four FETs is individually tuned by varying its gate voltage by ΔV from the common gate voltage of the other three gates, in order to rebalance the bridge. We find that the corresponding sensitivity normalized to the input voltage reaches 4.5 mV/(V MPa). It is thus a factor of about 10 higher than the conventional sensitivity based on the bridge output voltage, which reaches 490 μV/(V MPa).

show abstract

Novel highly miniaturized multi-stress sensor field effect transistor with eight source/drain terminals

Cited by 9 publications

References 8 publications

Advanced silicon microstructures, sensors, and systems

Advanced silicon microstructures, sensors, and systems

Package Stress Monitor to Compensate for the Piezo-Hall Effect in CMOS Hall Sensors

Novel method to operate piezo-FET-based stress sensor offers tenfold increase in sensitivity

Contact Info

Product

Resources

About