Novel edge suppression technique for planar avalanche photodiodes

Haralson, Ii. J.N.; Brennan, Kevin F.

doi:10.1109/3.806599

Cited by 9 publications

(6 citation statements)

References 15 publications

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“…The joint opening effect APD examined here is designed to reduce the transit time and avalanche buildup time when compared to our earlier design [16]. In the previously reported design, the primary well was spatially separated from the decoupling layer with a 1 µm thick separation layer.…”

Section: Computational Investigation Of the High Speed Joe-apdmentioning

confidence: 98%

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<title>Edge breakdown suppression in planar avalanche photodiodes: the joint opening effect avalanche photodiode</title>

Haralson

Brennan

2001

Photodetectors: Materials and Devices VI

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We present a discussion of a new edge breakdown suppression scheme for use in planar avalanche photodiodes called the joint opening effect avalanche photodiode, JOE-APD. The JOE-APD utilizes a single growth process that achieves center breakdown dominance without the use of guard rings, partial charge sheets or surface etches. Edge breakdown suppression is achieved within the JOE-APD by partially insulating the electric field growth in the active region from the geometry of the primary well. This design methodology allows for the fabrication of a thin multiplication region, which is necessary, for APDs used in Gb/s applications. In addition the electric fields at the surface of the joint opening effect APD are reduced. An advanced drift-diffusion simulation is used to demonstrate the workings of the JOE-APD.

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Section: Computational Investigation Of the High Speed Joe-apdmentioning

confidence: 98%

“…Recently a new method for suppressing edge breakdown in planar avalanche photodiodes was reported [16]. This new method, known as the joint opening effect, JOE, (Fig.…”

Section: Introductionmentioning

confidence: 99%

<title>Edge breakdown suppression in planar avalanche photodiodes: the joint opening effect avalanche photodiode</title>

Haralson

Brennan

2001

Photodetectors: Materials and Devices VI

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“…This design is referred to as the joint opening effect (JOE-APD [136]). The JOE-APD uses a single growth process and diffusion of a single well to achieve center breakdown.…”

Section: Performance Issuesmentioning

confidence: 99%

Invited Review: Superlattice and multiquantum well avalanche photodetectors: physics, concepts and performance

Brennan

Haralson

2000

Superlattices and Microstructures

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“…In order to suppress edge breakdown, it has been proposed a method of spatial separation of multiplication layer and p + -region by inclusion of undoped separation layer and additional p-charge sheet. This design methodology was referred to as a joint opening effect (Haralson and Brennan 1999). The main goal of this paper is to provide design considerations for such guardring-free planar InGaAs/InP avalanche photodiode and numerically simulate characteristics of the photodiode with optimized structure.…”

Section: Introductionmentioning

confidence: 99%

Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

2008

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Design and characteristics of the guardring-free planar InGaAs/InP avalanche photodiode are considered based on 2D numerical simulation. The device incorporates n-charge sheet and p-charge sheet, which spatially separates multiplication layer and p + -region. Simulation results of 2D electric field and impact ionization rate profile, currentvoltage, capacitance-voltage and bandwidth-gain characteristics are discussed.

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Novel edge suppression technique for planar avalanche photodiodes

Cited by 9 publications

References 15 publications

<title>Edge breakdown suppression in planar avalanche photodiodes: the joint opening effect avalanche photodiode</title>

<title>Edge breakdown suppression in planar avalanche photodiodes: the joint opening effect avalanche photodiode</title>

Invited Review: Superlattice and multiquantum well avalanche photodetectors: physics, concepts and performance

Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

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