<title>Edge breakdown suppression in planar avalanche photodiodes: the joint opening effect avalanche photodiode</title>

Abstract

We present a discussion of a new edge breakdown suppression scheme for use in planar avalanche photodiodes called the joint opening effect avalanche photodiode, JOE-APD. The JOE-APD utilizes a single growth process that achieves center breakdown dominance without the use of guard rings, partial charge sheets or surface etches. Edge breakdown suppression is achieved within the JOE-APD by partially insulating the electric field growth in the active region from the geometry of the primary well. This design methodology allows for the fabrication of a thin multiplication region, which is necessary, for APDs used in Gb/s applications. In addition the electric fields at the surface of the joint opening effect APD are reduced. An advanced drift-diffusion simulation is used to demonstrate the workings of the JOE-APD.