Novel device isolation technology with selective epitaxial growth

Extension of One‐Dimensional Film Model for Chemical Vapor Deposition to Predict Selective Epitaxial Growth Rates

“…Because concentration profiles are established very rapidly relative to the surface growth rate, a pseudo-steady state form of Eq. [1] is used…”

“…In recent years, there has been a renewed interest in selective epitaxial growth (SEG) because of its promise as a device isolation scheme for fabricating submicron device structures. Many investigators have demonstrated the ability of SEG to improve device isolation in both bi-polar (1,2) and CMOS devices (3)(4)(5). Isolation by SEG is achieved by dry etching trenches in an oxide layer that is 1-2 ~m thick.…”

Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy

“…Aside from the dislocation reduction, SAG/ELO has been known to have various applications such as epitaxial lift-off, 32,33) formation of desired facet structures, 34) fabrication of layered device structures on the vertical facets, 35,36) formation of edge terminations, 35) embedding polysilicon gates, 37,38) metal gates, 39) and layered dielectrics, 40) and device isolation. 41) Thus, SAG/ELO can be one of the state-of-the-art fabrication processes for β-Ga 2 O 3 power devices. Therefore, further research on the SAG/ELO of β-Ga 2 O 3 is required to understand its behavior and explore potential applications.…”

Selective Epitaxial Trench (SET)

“…Techniques for achieving selective epitaxial growth in openings formed in oxide layers of 1-2 ~m in thickness have been known for some time (6). Recent work has extended development of these selective epitaxial processes primarily in systems operating at reduced pressure due to concern with surface cleanliness, defect formation, and low temperature operation (7)(8)(9)(10). Mixed simultaneous polysilicon and epitaxial growth has also been reported for combined device-isolation fabrication (7,11).…”

“…Recent work has extended development of these selective epitaxial processes primarily in systems operating at reduced pressure due to concern with surface cleanliness, defect formation, and low temperature operation (7)(8)(9)(10). Mixed simultaneous polysilicon and epitaxial growth has also been reported for combined device-isolation fabrication (7,11). This paper will deal largely with the single-crystal refill of deep trench structures which can be employed as isolation structures in VLSI circuits.…”