Novel design strategy for GaAs‐based solar cell by application of single‐walled carbon nanotubes topmost layer

Mitin, D. M.; Bolshakov, A D; Neplokh, Vladimir; Можаров, А. М.; Raudik, S. A.; Fedorov, Vladimir V.; Shugurov, K. Yu; Mikhailovskii, Vladimir; Rajanna, Pramod Mulbagal; Fedorov, Fedor S.; Nasibulin, Albert G.; Mukhin, I. S.

doi:10.1002/ese3.713

Cited by 8 publications

(6 citation statements)

References 53 publications

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“…The SWCNT pad application routine started with PDMS-St/NW membrane wetting by isopropyl alcohol (IPA) droplet, so the SWCNT had an effective adhesion to the PDMS-St surface; then in a few minutes IPA was evaporated and the filter paper can be blown by a soft air flow. In order to provide electrical contact to the NW array, the SWCNT pads were densified again with IPA [46]. SEM images of PDMS-St/NW membrane and SWCNT contact pads on both sides are shown in figure 3.…”

Section: Synthesis and Application Of Swcnt Contactmentioning

confidence: 99%

Fabrication and electrical study of large area free-standing membrane with embedded GaP NWs for flexible devices

Kochetkov¹,

Neplokh

Fedorov

et al. 2020

Nanotechnology

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Flexible optoelectronic structures are required in a wide range of applications. Large scale modified silicone-embedded n-GaP nanowire arrays of a record 6 µm thin membranes were studied. A homogeneous silicone encapsulation was enabled by G-coating using a heavy-load centrifuge. The synthesized graft-copolymers of polydimethylsiloxane (PDMS) and polystyrene demonstrated two times lower adhesion to Si compared to standard PDMS, allowing 3 square inch area high quality silicone/nanowire membrane mechanical release, preserving the growth Si substrate for a further re-use after chemical cleaning. The 90% transparent single-walled carbon nanotubes electrical contacts to the embedded n-GaP nanowires demonstrated mechanical and electrical stability. The presented methods can be used for the fabrication of large scale flexible inorganic optoelectronic devices.

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Section: Synthesis and Application Of Swcnt Contactmentioning

confidence: 99%

Fabrication and electrical study of large area free-standing membrane with embedded GaP NWs for flexible devices

Kochetkov¹,

Neplokh

Fedorov

et al. 2020

Nanotechnology

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“…GaAsNTs are considered as suitable options instead of carbon nanotubes [2, 3, 5]. GaAs are good materials for optoelectronic and electronic usages [15–17]. In addition, these nanotubes are more suitable for specific applications in mechanical and electronic devices than carbon nanotubes.…”

Section: Introductionmentioning

confidence: 99%

Tuning inter‐wall spacing and structural properties of double‐walled gallium arsenide nanotubes

Nikbakhtian

Movlarooy

2023

Int J of Quantum Chemistry

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The structural, stability and electronic properties of double-walled GaAs nanotubes (DWGaAsNTs) are investigated based on density functional theory (DFT) by considering Van der Waals corrections with the SIESTA code. The computations are done on the zigzag (7,0)@(m,0) and (6,0)@(m,0) with (m = 12 to 18) and the armchair (4,4) @(m,m) and (5,5)@(m,m) DWGaAsNTs with (m = 7 to 14). The calculated binding and formation energies revealed that the armchair and zigzag DWGaAsNTs with differential chirality of 5, (m,m)@(m + 5,m + 5) and 8, (m,0)@(m + 8,0) and inter-layer space of roughly 5.4 and 4.9 Å are the most favorable DWGaAsNTs, respectively. All armchair and zigzag DWGaAsNTs are direct bandgap semiconductors according to the electronic band structure. Furthermore, it is found that with increasing the spaces between walls and diameters of the tubes, the value of the band gap increases, and the changing trend is almost constant at greater distances between walls. Also, the double-walled GaAs nanotubes have a narrower bandgap than single-walled nanotubes. The implications of this research can certainly be useful in future empirical studies.

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“…These materials are well-suitable for building heterostructures and magic-angle systems [17,18]; therefore, they have been used to explore novel quantum states, such as topological [19,20] and superconducting phases [21,22]. The excellent properties of 2D heterostructures also provide them great application potentials in electronic devices [23][24][25]. In addition, the band structure of some 2D materials, such as MoSe 2 and WSe 2 , undergoes a layer-dependent transition from a direct to an indirect bandgap semiconductor [26,27], and similar thicknessdependent band evolution has also been observed in the III-VI vdW materials, such as InSe and In 2 Se 3 [28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial β–In2Se3 Thin Films

Meng

Liu

et al. 2023

Nanomaterials

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Ferroelectric materials have received great attention in the field of data storage, benefiting from their exotic transport properties. Among these materials, the two-dimensional (2D) In2Se3 has been of particular interest because of its ability to exhibit both in-plane and out-of-plane ferroelectricity. In this article, we realized the molecular beam epitaxial (MBE) growth of β–In2Se3 films on bilayer graphene (BLG) substrates with precisely controlled thickness. Combining in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) measurements, we found that the four-monolayer β–In2Se3 is a semiconductor with a (9 × 1) reconstructed superlattice. In contrast, the monolayer β–In2Se3/BLG heterostructure does not show any surface reconstruction due to the interfacial interaction and moiré superlattice, which instead results in a folding Dirac cone at the center of the Brillouin zone. In addition, we found that the band gap of In2Se3 film decreases after potassium doping on its surface, and the valence band maximum also shifts in momentum after surface potassium doping. The successful growth of high-quality β–In2Se3 thin films would be a new platform for studying the 2D ferroelectric heterostructures and devices. The experimental results on the surface reconstruction and band structures also provide important information on the quantum confinement and interfacial effects in the epitaxial β–In2Se3 films.

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Novel design strategy for GaAs‐based solar cell by application of single‐walled carbon nanotubes topmost layer

Cited by 8 publications

References 53 publications

Fabrication and electrical study of large area free-standing membrane with embedded GaP NWs for flexible devices

Fabrication and electrical study of large area free-standing membrane with embedded GaP NWs for flexible devices

Tuning inter‐wall spacing and structural properties of double‐walled gallium arsenide nanotubes

Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial β–In2Se3 Thin Films

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