Fabrication and electrical study of large area free-standing membrane with embedded GaP NWs for flexible devices

Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition and structural properties were examined by means of Raman microspectroscopy and transmission electron microscopy. To study the optical properties of the synthesized nanoheterostructures, the nanowire array was embedded into the silicone rubber membrane and further released from the growth substrate. The reported approach allows us to study the nanowire optical properties avoiding the response from the parasitically grown island layer. Photoluminescence and Raman studies reveal different nitrogen content in nanowires and parasitic island layer. The effect is discussed in terms of the difference in vapor solid and vapor liquid solid growth mechanisms. Photoluminescence studies at low temperature (5K) demonstrate the transition to the quasi-direct gap in the nanowires typical for diluted nitrides with low N-content. The bright room temperature photoluminescent response demonstrates the potential application of nanowire/polymer matrix in flexible optoelectronic devices.

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“…The NW encapsulation and exfoliation technique employing cap-film for mechanical support was described by Neplokh et.al. in [52,53].…”

Section: Silicone Rubber Membrane Fabricationmentioning

confidence: 99%

Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

et al. 2020

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“…Then, the MW array with pre-deposited thin metal layers was encapsulated into a PDMS layer by G-coating method [42,43]. G-coating is performed with a swinging-bucket centrifuge instead of a standard spinner.…”

Section: Synthesis Of Ingan/gan Microwire Arraysmentioning

confidence: 99%

“…After PDMS deposition, the samples were baked in a muffle oven at 80 • C for 12 h followed by etching in O 2 plasma to remove the residual PDMS wetting layer from MW top parts for further contact application. The procedure was previously reported in [42] and [43]. Then, the PDMS/MW membranes were released from the growth substrate by a razor blade [42].…”

Section: Pdms/mw Membrane Fabricationmentioning

confidence: 99%

“…The procedure was previously reported in [42] and [43]. Then, the PDMS/MW membranes were released from the growth substrate by a razor blade [42].…”

Section: Pdms/mw Membrane Fabricationmentioning

confidence: 99%

“…Optoelectronic properties of InGaN/GaN MW arrays, including MW/PDMS membrane configuration, were investigated in detail in our previously reported works including [23,24,31,38,49], etc. Flexibility of InGaN/GaN MW/PDMS membrane LEDs and SWCNT films were also thoroughly studied in [23,24,28,41,42], so it is not addressed in the presented work. Therefore, in this section we focus on stretchability-related properties of the fabricated stretchable LEDs.…”

Section: Electroluminescence Measurementsmentioning

confidence: 99%

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Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films

Kochetkov¹,

Neplokh

Mastalieva³

et al. 2021

Nanomaterials

Self Cite

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We propose and demonstrate both flexible and stretchable blue light-emitting diodes based on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane membranes with strain-insensitive transparent electrodes involving single-walled carbon nanotubes. InGaN/GaN core-shell microwires were grown by metal-organic vapor phase epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films can stand up to 20% stretching while maintaining efficient operation. Membrane-based LEDs show less than 15% degradation of electroluminescence intensity after 20 cycles of stretching thus opening an avenue for highly deformable inorganic devices.

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Flexible Perovskite Light‐Emitting Diodes: Characteristics and Performance

Liu,

Mukhin,

Islamova

et al. 2023

Adv Funct Materials

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Future displays need to be stretchable, bendable, and wearable to match consumers’ needs for convenience, portable equipment, and real‐time information display. The development of flexible light source components, like flexible light‐emitting diodes (LEDs), is urgently required to fulfill these needs. Metal halide perovskites, known for their excellent optoelectronic properties and ductility, are considered the most promising light‐emitting materials for high‐definition displays, and their outstanding advantage is that the metal halide perovskites would be achieved by solution process under low temperature (<150 °C), which is especially good for the flexible organic substrates to maintain high conductivity during fabrication of flexible LEDs. In recent years, flexible perovskite LEDs have made significant progress, but still face a great deal of difficulties, obstacles, and great challenges. Herein, the mechanical properties of perovskite materials are examined and the failures for perovskite‐based flexible optoelectronic devices under strain are discussed. The authors then focus on optimizing each functional layer and the recent advancement in flexible perovskite LEDs is summarized. Finally, a brief outlook on the challenges faced by flexible perovskite LEDs and their possible future development is provided.

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Fabrication and electrical study of large area free-standing membrane with embedded GaP NWs for flexible devices

Cited by 11 publications

References 51 publications

Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films

Flexible Perovskite Light‐Emitting Diodes: Characteristics and Performance

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