Note: Fiber optic transport probe for Hall measurements under light and magnetic field at low temperatures: Case study of a two dimensional electron gas

Bhadauria, P. P. S.; Gupta, Anurag; Kumar, Pramod; Dogra, Anjana; Budhani, R. C.

doi:10.1063/1.4921486

Cited by 6 publications

(3 citation statements)

References 17 publications

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“…The temporal evolution of resistance under irradiation of x = 0.01, 0.03, and 0.05 heterointerfaces are shown in Figures S5–S7. Namely, the LANO/STO heterointerfaces exhibit a persistent photoconductivity. , To compare the change in resistance of samples induced by light, we define the PR = [( R 0 – R p )/ R p ] × 100%, where R 0 is the original resistance before light irradiation and R p is the resistance of heterointerfaces under light irradiation. The temperature-dependent PR values of heterointerfaces are shown in Figure b.…”

Section: Resultsmentioning

confidence: 99%

Modulated Transport Behavior of Two-Dimensional Electron Gas at Ni-Doped LaAlO₃/SrTiO₃ Heterointerfaces

Yan

Zhang

Wang

et al. 2017

ACS Appl. Mater. Interfaces

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Modulating transport behaviors of two-dimensional electron gases are of critical importance for applications of the next-generation multifunctional oxide electronics. In this study, transport behaviors of LaAlO/SrTiO heterointerfaces modified through the Ni dopant and the light irradiation have been investigated. Through the Ni dopant, the resistances increase significantly and a resistance upturn phenomenon due to the Kondo effect is observed at T < 40 K. Under a 360 nm light irradiation, the interfaces exhibit a persistent photoconductivity and a suppressed Kondo effect at low temperature due to the increased mobility measured through the photo-Hall method. Moreover, the relative changes in resistance of interfaces induced by light are increased from 800 to 6600% at T = 12 K with increasing the substitution of Ni, which is discussed by the band bending and the lattice effect due to the Ni dopant. This work paves the way for better controlling the emerging properties of complex oxide heterointerfaces and would be helpful for photoelectric device applications based on all-oxides.

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Section: Resultsmentioning

confidence: 99%

Modulated Transport Behavior of Two-Dimensional Electron Gas at Ni-Doped LaAlO₃/SrTiO₃ Heterointerfaces

Yan

Zhang

Wang

et al. 2017

ACS Appl. Mater. Interfaces

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“…Low temperature measurements : The low temperature opto‐electrical measurements were performed in a Magnetic property measurement system (MPMS) by Quantum Design with a fibre optic transport probe (FOTP) that is used to illuminate the sample with a Xenon lamp (LOT‐Quantum Design) light source …”

Section: Methodsmentioning

confidence: 99%

Topological Insulator Based Dual State Photo‐Switch Originating Through Bulk and Surface Conduction Channels

Bhattacharyya

Gupta

Senguttuvan

et al. 2018

Physica Status Solidi (b)

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Topological insulators are novel electronic materials, where time reversal symmetry protects the spin‐polarized surface states from backscattering. Although, the bulk offers a trivial semiconducting response to incident light, but the metallic surface states exhibit interesting electrical response towards the incident radiation, such as polarization dependent surface photocurrent and topological phase transitions. Here, we study the temperature dependent near‐infrared photoresponse in bismuth selenide (Bi2Se3) nano‐flakes. A very good photo‐sensitivity to near‐infrared 800 nm wavelength is observed for the temperature range 300–2 K. Voltage responsivity at 2 K (1.481 × 1010 VW−1) is estimated to be four‐order greater than at 300 K (2.095 × 106 VW−1) and is comparatively much higher than the previously reported values of voltage responsivity in other materials. Interestingly, we also find the temperature dependent existence of both positive and negative photoresponse in our device. An anomalous photoresponse reversal is observed at 2 K, where resistance of the nano‐flake increases under light illumination. We propose that this phenomenon is due to the topological surface states, which have dominant transport contribution at very low temperatures. These observations establish the fact that topological insulators can be further engineered to develop a dual state photo‐switch, by manipulating the bulk and surface state conduction contribution.

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“…We have used (i) halogen light, (ii) 532 nm laser light in the region (power ~32 mW/cm 2 ), and (iii) 1064 nm laser light in NIR range with (power ~29 mW/cm 2 ) as the light sources for illuminating the devices. The low temperature measurements were done in a SQUID magnetometer (Quantum Design) with a homebuilt fiber coupled optical excitation using wavelength specific filters in the visible and NIR region 58 . The low temperature measurements were done under the lights with 405 nm (~1.5–2 mW/cm 2 ) wavelength in the visible and 800 nm (~6 mW/cm 2 ) in the NIR regions.…”

Section: Methodsmentioning

confidence: 99%

Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor

Sharma

Yadav

Gajar

et al. 2017

Sci Rep

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The elemental Nb is mainly investigated for its eminent superconducting properties. In contrary, we report of a relatively unexplored property, namely, its superior optoelectronic property in reduced dimension. We demonstrate here that nanostructured Nb thin films (NNFs), under optical illumination, behave as room temperature photo-switches and exhibit bolometric features below its superconducting critical temperature. Both photo-switch and superconducting bolometric behavior are monitored by its resistance change with light in visible and near infrared (NIR) wavelength range. Unlike the conventional photodetectors, the NNF devices switch to higher resistive states with light and the corresponding resistivity change is studied with thickness and grain size variations. At low temperature in its superconducting state, the light exposure shifts the superconducting transition towards lower temperature. The room temperature photon sensing nature of the NNF is explained by the photon assisted electron-phonon scattering mechanism while the low temperature light response is mainly related to the heat generation which essentially changes the effective temperature for the device and the device is capable of sensing a temperature difference of few tens of milli-kelvins. The observed photo-response on the transport properties of NNFs can be very important for future superconducting photon detectors, bolometers and phase slip based device applications.The refractory metal Nb is famous for its superconducting properties and it is known to provide the highest critical temperature (T c ) (bulk T c = 9.2 K) for any elemental superconductor. Being one of the most used primary superconductors, Nb is well explored material in the field of superconducting photon detectors 1, 2 and bolometric applications 3 . Besides, it exhibits various physical properties like high melting point, high thermal conductivity, high critical current density etc 4 . Since decades, dimensional effects of niobium on its physical properties like critical temperature, superconducting energy gap, critical field, coherence length, penetration depth etc. have been explored. These properties vary with the dimension of niobium particles/grains and/or films 5 . It is well known that nanomaterials can exist as various nanostructures such as quantum dots, nanowires, nanoparticles, etc. which play key role in upgrading their optoelectronic properties, mainly controlled by the quantum effect, as compared to their bulk counterpart 6,7 . For example, granular Nb thin films have been shown to act like Josephson junctions 5,8 . During 1970's the effects of light on conventional superconductors have been explored intensely 9 . The effect of light and transient photo-response on oxide based high-T c superconductors have also garnered a reasonable attention in the field of superconductivity based optoelectronic applications 10 . Here, we explore optoelectronic properties of NNFs at room temperature (RT) and at low temperature (LT), above and below the T c . To the best of ou...

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Note: Fiber optic transport probe for Hall measurements under light and magnetic field at low temperatures: Case study of a two dimensional electron gas

Cited by 6 publications

References 17 publications

Modulated Transport Behavior of Two-Dimensional Electron Gas at Ni-Doped LaAlO₃/SrTiO₃ Heterointerfaces

Modulated Transport Behavior of Two-Dimensional Electron Gas at Ni-Doped LaAlO₃/SrTiO₃ Heterointerfaces

Topological Insulator Based Dual State Photo‐Switch Originating Through Bulk and Surface Conduction Channels

Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor

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Note: Fiber optic transport probe for Hall measurements under light and magnetic field at low temperatures: Case study of a two dimensional electron gas

Cited by 6 publications

References 17 publications

Modulated Transport Behavior of Two-Dimensional Electron Gas at Ni-Doped LaAlO3/SrTiO3 Heterointerfaces

Modulated Transport Behavior of Two-Dimensional Electron Gas at Ni-Doped LaAlO3/SrTiO3 Heterointerfaces

Topological Insulator Based Dual State Photo‐Switch Originating Through Bulk and Surface Conduction Channels

Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor

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Modulated Transport Behavior of Two-Dimensional Electron Gas at Ni-Doped LaAlO₃/SrTiO₃ Heterointerfaces

Modulated Transport Behavior of Two-Dimensional Electron Gas at Ni-Doped LaAlO₃/SrTiO₃ Heterointerfaces