2017
DOI: 10.1038/s41598-017-00976-1
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Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor

Abstract: The elemental Nb is mainly investigated for its eminent superconducting properties. In contrary, we report of a relatively unexplored property, namely, its superior optoelectronic property in reduced dimension. We demonstrate here that nanostructured Nb thin films (NNFs), under optical illumination, behave as room temperature photo-switches and exhibit bolometric features below its superconducting critical temperature. Both photo-switch and superconducting bolometric behavior are monitored by its resistance ch… Show more

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Cited by 12 publications
(16 citation statements)
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“…The XRD pattern for the control sample reveals majorly the cubic Nb phase. However, some oxide phases for Nb appear too due to high temperature annealing on oxide substrate 21 . For the samples on nitride substrates, majority of the peaks relate to hexagonal Nb 2 N phase and consequently, a clear difference from the control sample is evident.…”
Section: Resultsmentioning
confidence: 99%
“…The XRD pattern for the control sample reveals majorly the cubic Nb phase. However, some oxide phases for Nb appear too due to high temperature annealing on oxide substrate 21 . For the samples on nitride substrates, majority of the peaks relate to hexagonal Nb 2 N phase and consequently, a clear difference from the control sample is evident.…”
Section: Resultsmentioning
confidence: 99%
“…This increased scattering leads to an increase in the resistance of the nanoflake via an additional scattering channel, and can also account for the NPR. NPR is a complicated phenomenon which has been previously observed in a variety of samples, for example, in InAs nanowires due to light assisted hot carrier trapping; in Bi‐doped p‐type ZnSe nanowires due to photon‐assisted absorption and desorption of oxygen from the surface; in Co‐doped silicon due to the trapping of conduction electrons by an empty localized trap state (hole) bounded to Co impurity; and in nanostructured Nb thin films due to light induced e–ph scattering . But, none of these explain our observed results.…”
Section: Discussionmentioning
confidence: 56%
“…From another aspect of optoelectronic technology, data storage as a digital memory using optical signal can be considered as the additional terminal of the device where an electromagnetic radiation is converted to electrical signal for the information storing application. [ 21,22 ] A narrow band and low power visible light source, which has non‐toxic effect on human tissue, can be useful also for biologically portable device application. [ 23,24 ] In this scenario, an organic optical RRAM is extremely useful for next level of technological advancement.…”
Section: Introductionmentioning
confidence: 99%