Gene activation and repression have been considerably elucidated in bacteria.1' 2 Comparable mechanisms, although of greater complexity, probably exist in the cells of higher organisms. Hormones seem to be involved in the latter, for structural genes are in many cases activated by hormones.3 Hormonal action may take
Halide perovskite
(HP) materials are actively researched for resistive
switching (RS) memory devices due to their current–voltage
hysteresis along with low-temperature processability, superior charge
mobility, and simple fabrication. In this study, all-inorganic RbPbI3 perovskite has been doped with Cl in the halide site and
incorporated as a switching media in the Ag/RbPbI3–x
Cl
x
/ITO structure, since
pure RbPbI3 is nonswitchable. Five compositions of the
RbPbI3–x
Cl
x
(x = 0, 0.3, 0.6, 0.9, and 1.2) films are
fabricated, and the conductivity was found to be increasing upon increase
in Cl concentration, as revealed by dielectric and I–V measurements. The device with a 20% chloride-substituted
film exhibits a higher on/off ratio, extended endurance, long retention,
and high-density storage ability. Finally, a plausible explanation
of the switching mechanism from iodine vacancy-mediated growth of
conducting filaments (CFs) is provided using conductive atomic force
microscopy (c-AFM). The c-AFM measurements reveal that pure RbPbI3 is insulating in nature, whereas Cl-doped films demonstrate
resistive switching behavior.
All-inorganic
halide perovskites are considered as favorable materials
for various electronic applications because of their superior functionality
and stability. In this study, the inorganic rubidium lead-bromide
(RbPbBr3) perovskite has been integrated as a resistive
switching (RS) layer in the Al/RbPbBr3/indium tin oxide/polyethylene
terephthalate flexible structure and exhibits both bipolar (memory)
switching and threshold switching functions. The threshold switching
appears for a low compliance current (CC), whereas the memory switching
is initiated by setting a higher CC. The resistive memory switching
operations along with multilevel programming, moderate endurance,
and retention performance show the reproducible and reliable nonvolatile
high-density memory feature. The robustness and mechanical flexibility
are established by uniform current–voltage curves under various
bending diameters and flexing cycles. Also, the first principle density
functional theory calculations demonstrate the contribution of each
element in the conduction band and valence band of RbPbBr3 with a direct band gap (2.24 eV). Finally, a mechanism in combination
with the formation/annihilation of a metal filament and a Br– ion vacancy filament is proposed to explain the RS behavior.
Recently, several types of lead halide perovskites are actively researched for resistive switching (RS) memory or artificial synaptic devices due to their current−voltage hysteresis along with the feasibility of fabrication,...
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