Compliance Current-Dependent Dual-Functional Bipolar and Threshold Resistive Switching in All-Inorganic Rubidium Lead-Bromide Perovskite-Based Flexible Device

Abstract

All-inorganic halide perovskites are considered as favorable materials for various electronic applications because of their superior functionality and stability. In this study, the inorganic rubidium lead-bromide (RbPbBr3) perovskite has been integrated as a resistive switching (RS) layer in the Al/RbPbBr3/indium tin oxide/polyethylene terephthalate flexible structure and exhibits both bipolar (memory) switching and threshold switching functions. The threshold switching appears for a low compliance current (CC), whereas the memory switching is initiated by setting a higher CC. The resistive memory switching operations along with multilevel programming, moderate endurance, and retention performance show the reproducible and reliable nonvolatile high-density memory feature. The robustness and mechanical flexibility are established by uniform current–voltage curves under various bending diameters and flexing cycles. Also, the first principle density functional theory calculations demonstrate the contribution of each element in the conduction band and valence band of RbPbBr3 with a direct band gap (2.24 eV). Finally, a mechanism in combination with the formation/annihilation of a metal filament and a Br– ion vacancy filament is proposed to explain the RS behavior.

Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb2Br5 perovskite

“…It is known that multilevel resistive switching can be achieved not only by modulating the stop voltage in the RESET process, but also via modulating the CC in the SET process. 41–44 Here, the multilevel data storage capability of the as-fabricated CsPb 2 Br 5 -based device was examined by controlling the current compliance, as shown in Fig. 4c.…”

“…44,45 This may be attributed to the dissolution of the Al ions from the top electrode (TE), and also the flow of the Br ions inside the switching layer. 44 At low values of electric field (up to ∼0.9 V), the experimental data fitting parameter is about 1 for both the positive and negative bias regions in the HRS, indicating the ohmic nature of electrical conduction. This may be due to the conduction of an excess number of thermally agitated charge carriers.…”

Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention

“…Our real-time continuous room temperature measurements also confirmed data retention capability greater than 10 7 s without any perceptible degradation of the resistance states. To the best of our knowledge, this data retention performance is the longest among all organic-inorganic hybrid perovskite Re-RAM systems reported so far (19)(20)(21)(22)(23)(24)(25)(26)(27). Our Ag/MAPbCl 3 NWs/Al Re-RAM devices also exhibited fast erasing and writing speed of 300 and 800 ps, respectively, ON/OFF ratio of ~10 7 , and endurance of 3 × 10 6 cycles.…”

Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device

“…As the forward voltage reaches V SET , the injected electrons cannot fill the trap but the trap maintains a filled-state; the electron concentration is high, and the device switches to the LRS. Furthermore, the rich regions of V Brs expand toward the ITO cathode and eventually forms CF due to their lowest activation energy, and the injected electrons can migrate by vacancy hopping [ 37 ]. Thus, the device stays at the LRS ( Figure 6 c).…”