Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Mazumder, Aishani; Ahmed, Taimur; Mayes, Edwin; Tawfik, Sherif Abdulkader; Russo, Salvy P.; Low, Mei Xian; Ranjan, Abhishek; Balendhran, Sivacarendran; Walia, Sumeet

doi:10.1002/aelm.202100999

Cited by 9 publications

(9 citation statements)

References 57 publications

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“…[ 13–15 ] With resistive switching behaviors in 2D materials constantly observed, 2D materials have opened a new avenue of pursuing novel materials with excellent switching properties and shown great potential for application in RRAM. [ 16,17 ]…”

Section: Introductionmentioning

confidence: 99%

“…[13][14][15] With resistive switching behaviors in 2D materials constantly observed, 2D materials have opened a new avenue of pursuing novel materials with excellent switching properties and shown great potential for application in RRAM. [16,17] 2D semiconducting bismuth oxyselenide (Bi 2 O 2 Se) has emerged with excellent properties and shown great potential in electronics and optoelectronics. Bi 2 O 2 Se based field-effect transistors with very high carrier mobility (>20 000 cm 2 V -1 s -1 ) and low subthreshold swing (≈65 mV dec -1 ) have been reported.…”

mentioning

confidence: 99%

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2D Heterostructure of Bi₂O₂Se/Bi₂SeO_x Nanosheet for Resistive Random Access Memory

Xia

Wang

Chen

et al. 2022

Adv Elect Materials

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2D materials have shown great potential in the application of resistive random access memory (RRAM) for information storage. Much attention has been attracted from 2D semiconducting bismuth oxyselenide (Bi2O2Se) for excellent properties in multi‐performance nanoelectronics. By using a chemical vapor deposition (CVD) method, Bi2O2Se nanosheets with high quality are grown. Combining with the oxygen plasma method, 2D heterostructure of Bi2O2Se/Bi2SeOx nanosheet is realized; and the heterostructure exhibits obvious resistive switching behavior. The resistive switching mechanism is analyzed in detail, and the conductive mechanism of the fabricated device is also discussed. The resistive switching of Bi2O2Se nanosheets is endowed through the method of O2 plasma treatment, which makes it feasible for developing its application in the RRAM.

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Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

2D Heterostructure of Bi₂O₂Se/Bi₂SeO_x Nanosheet for Resistive Random Access Memory

Xia

Wang

Chen

et al. 2022

Adv Elect Materials

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“…The monolayer TMDs provide possibilities for fabricating ultrathin switching layers, which is beneficial for device scaling as well as for very low-power applications. Mazumder et al reported bipolar switching in a CBRAM device fabricated with a layered InSe 2D monochalcogenide switching layer ( Figure 5 a,b) [ 50 ]. As shown in Figure 5 c, the thin (8.8 nm) layered switching material-based device presented nonvolatile switching with a stable retention time of >10 5 s, maintaining an ON/OFF ratio of >10 3 .…”

Section: Electrode and Switching Materialsmentioning

confidence: 99%

“…Reprinted from Ref. [ 50 ]. ( d ) The typical I–V characteristics of a CBRAM device with structure Cu/GeTe/TiN presenting bipolar switching.…”

Section: Figurementioning

confidence: 99%

Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications

Abbas

Ang

2022

Micromachines

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Due to a rapid increase in the amount of data, there is a huge demand for the development of new memory technologies as well as emerging computing systems for high-density memory storage and efficient computing. As the conventional transistor-based storage devices and computing systems are approaching their scaling and technical limits, extensive research on emerging technologies is becoming more and more important. Among other emerging technologies, CBRAM offers excellent opportunities for future memory and neuromorphic computing applications. The principles of the CBRAM are explored in depth in this review, including the materials and issues associated with various materials, as well as the basic switching mechanisms. Furthermore, the opportunities that CBRAMs provide for memory and brain-inspired neuromorphic computing applications, as well as the challenges that CBRAMs confront in those applications, are thoroughly discussed. The emulation of biological synapses and neurons using CBRAM devices fabricated with various switching materials and device engineering and material innovation approaches are examined in depth.

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“…The integration of two-dimensional (2D) materials into electronic circuits gives promise of taking steps beyond the conventional metal-oxide-based technologies 1 – 4 . Being implemented in microelectronic platforms, e.g., memristors 1 , 5 – 11 , such materials with their advanced functionality and outstanding capability circumvent innovative challenges.…”

Section: Introductionmentioning

confidence: 99%

Highly light-tunable memristors in solution-processed 2D materials/metal composites

Sheykhifar

Mohseni

2022

Sci Rep

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Memristors—competitive microelectronic elements which bring together the electronic sensing and memory effects—potentially are able to respond against physical and chemical effects that influence their sensing capability and memory behavior. However, this young topic is still under debate and needs further attention to be highly responding to or remaining intact against physical effects, e.g., light illumination. To contribute to this scenario, using a composite of two-dimensional graphene or MoS2 doped with meso-structures of metal/metal-oxides of Ag, Cu and Fe family, we presented scalable and printable memristors. The memristive behavior shows strong dependency upon light illumination with a high record of 105 ON/OFF ratio observed so far in 2-terminal systems based on two-dimensional materials or metal oxide structures. Moreover, we found that the memristors can remain stable without illumination, providing a novel approach to use these composites for developing neuromorphic computing circuits. The sensing and memristive mechanisms are explained based on the electronic properties of the materials. Our introduced materials used in the memristor devices can open new routes to achieve high sensing capability and improve memristance of the future microelectronic elements.

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Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Cited by 9 publications

References 57 publications

2D Heterostructure of Bi₂O₂Se/Bi₂SeO_x Nanosheet for Resistive Random Access Memory

2D Heterostructure of Bi₂O₂Se/Bi₂SeO_x Nanosheet for Resistive Random Access Memory

Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications

Highly light-tunable memristors in solution-processed 2D materials/metal composites

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Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Cited by 9 publications

References 57 publications

2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory

2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory

Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications

Highly light-tunable memristors in solution-processed 2D materials/metal composites

Contact Info

Product

Resources

About

2D Heterostructure of Bi₂O₂Se/Bi₂SeO_x Nanosheet for Resistive Random Access Memory

2D Heterostructure of Bi₂O₂Se/Bi₂SeO_x Nanosheet for Resistive Random Access Memory