Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications

Abstract

Due to a rapid increase in the amount of data, there is a huge demand for the development of new memory technologies as well as emerging computing systems for high-density memory storage and efficient computing. As the conventional transistor-based storage devices and computing systems are approaching their scaling and technical limits, extensive research on emerging technologies is becoming more and more important. Among other emerging technologies, CBRAM offers excellent opportunities for future memory and neuromorphic computing applications. The principles of the CBRAM are explored in depth in this review, including the materials and issues associated with various materials, as well as the basic switching mechanisms. Furthermore, the opportunities that CBRAMs provide for memory and brain-inspired neuromorphic computing applications, as well as the challenges that CBRAMs confront in those applications, are thoroughly discussed. The emulation of biological synapses and neurons using CBRAM devices fabricated with various switching materials and device engineering and material innovation approaches are examined in depth.

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

“…Thus, novel data processing technologies need to be explored to critically address the issue of insufficient computing capacities particularly in "memory" which nowadays constitutes about 60% of the processor area thus constituting for the major target of the designers for device miniaturization. Presently, researchers in nanoelectronics field are focusing their efforts on resistive random access memory (RRAM) which is one form of memristor technology as a feasible option for existing CMOS-based device miniaturization [5][6][7][8][9][10][11][12][13]. The research in RRAM continues to witness a tremendous growth as it is seen as the promising alternative to existing CMOS devices owing to its numerous advantages such as scalability, high data retention, CMOS and 3D integrability, multistate programmability, good endurance, lower power consumption and relatively high speed [14].…”

Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM

“…With the increasing demand for data parallelism to save the time and energy cost of accessing data, RRAM plays a significant role in in-memory computing research, including neuromorphic systems. − RRAM is mainly classified into valence change memory (VCM) or electrochemical metallization memory (ECM) according to the type of ions used during resistive switching (RS). , ECM, also known as conductive-bridging random access memory (CBRAM), alters its resistive state by forming a cation-type conductive path composed of metal atoms from the electrochemically active metal electrode. CBRAM is superior to other types of RRAM in terms of on/off resistance ratio, switching speed, and programming voltage. − Conventional CBRAM cells contain Ag, Cu, and Ni active metal electrodes and have been widely investigated since the introduction of ECM. − …”

Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

“…Nonvolatile memory technology has reached its limit in terms of scalability, high data density, fast switching speed, high power consumption, lower device size, and so forth. , In order to maintain the current pace of development in the field of electronic technology, emerging memories with distinctive advantages such as higher speed, high storage density, facile processing, and so forth are highly demanding. , In this regard, the concept of memristor and resistive random access memory has emerged as a possible alternative to the existing memory technologies. − Resistive switching (RS) has evolved with a great deal of scientific and technological advantages, fulfilling the demands of sustainable electronics toward the next-generation memory devices owing to its scalability, reliability, low power consumption, fast switching characteristics, compatibility in various substrates, inexpensive fabrication procedure, and so forth. , RS refers to the physical phenomenon where a dielectric or insulator suddenly changes its resistance under the action of applied bias. − In case of RS memory, typical memory-related figures of merit such as switching speed, data retention, ON/OFF ratio or memory window, integration density, endurance, and so forth are competitive with established conventional memory technologies. − Moreover, generation of e-waste has become one of the burning issues due to the utilization of conventional Si-based memory devices. , As per reports, India alone produces 52 million tons of e-waste which is 40% of the global share . Memory or data storage devices have contributed a large share to this e-waste.…”