Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric

Lu, Zhong‐Yuan; Serrao, Claudy Rayan; Khan, Asif Islam; You, Long; Wong, Justin C.; Ye, Yu; Zhu, Hanyu; Zhang, Xiang; Salahuddin, Sayeef

doi:10.1063/1.4992113

Cited by 49 publications

(41 citation statements)

References 23 publications

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“…Short retention in Erase is first attributed to the depolarization effects induced by non‐ferroelectric PMMA‐brush attached to the ferroelectric 80BST film. Still, the retention time of our 2D device using 80BST is regarded much better than previous 2D device reports using PZTs . The particular reason on inferior retention property (depolarization) in Erase state could be discussed.…”

Section: Resultsmentioning

confidence: 62%

“…Lead‐free perovskite was thus selected using BST, effectively resulting in experimental success. According to Table , many ferroelectric memory devices in FET type are listed, however, it is noted that only two among them are supported by Pb‐free inorganic ferroelectrics including ours. We thus regard that our novel BST‐based 2D MoS 2 FETs are much meaningful in both respects of practical application and environmental sustainability.…”

Section: Resultsmentioning

confidence: 97%

“…Low voltage FETs usually need thin dielectrics to support MoS 2 channel with electron charge accumulations, but their operation often faces voltage limit . For non‐volatile ferroelectric memory, a thick organic fluoropolymer P(VDF‐TrFE) has been utilized in general, since inorganic ferroelectrics are much difficult to prepare and mostly found to contain an environmentally undesirable element [e.g., lead (Pb)] . As known, the thick organic P(VDF‐TrFE) always needs high voltage pulse (>12 V for 200 nm thickness, due to a high coercive electric field ≈60 MV m −1 ) for effective dipole alignments.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free Ba_xSr_1‐xTiO₃ and MoS₂ Channel

Jeong

Jin

Park

et al. 2019

Adv Funct Materials

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Coupling between non‐toxic lead‐free high‐k materials and 2D semiconductors is achieved to develop low voltage field effect transistors (FETs) and ferroelectric non‐volatile memory transistors as well. In fact, low voltage switching ferroelectric memory devices are extremely rare in 2D electronics. Now, both low voltage operation and ferroelectric memory function have been successfully demonstrated in 2D‐like thin MoS2 channel FET with lead‐free high‐k dielectric BaxSr1‐xTiO3 (BST) oxides. When the BST surface is coated with a 5.5‐nm‐ultrathin poly(methyl methacrylate) (PMMA)‐brush for improved roughness, the MoS2 FET with BST (x = 0.5) dielectric results in an extremely low voltage operation at 0.5 V. Moreover, the BST with an increased Ba composition (x = 0.8) induces quite good ferroelectric memory properties despite the existence of the ultrathin PMMA layer, well switching the MoS2 FET channel states in a non‐volatile manner with a ±3 V low voltage pulse. Since the employed high‐k dielectric and ferroelectric oxides are lead‐free in particular, the approaches for applying high‐k BST gate oxide for 2D MoS2 FET are not only novel but also practical towards future low voltage nanoelectronics and green technology.

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Section: Resultsmentioning

confidence: 62%

Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free Ba_xSr_1‐xTiO₃ and MoS₂ Channel

Jeong

Jin

Park

et al. 2019

Adv Funct Materials

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“…A more common device platform using MoS 2 /ferroelectric‐TMO heterostructures was realized in ferroelectrically gated field‐effect transistors with MoS 2 as a channel (Figure f). For a ferroelectric layer, PZT among TMOs and Al‐doped hafnium oxide among high‐dielectric‐constant materials were tested owing to their compatibility with Si‐based semiconducting fabrication processes . Unlike the simple replacement of constituents with new materials in a conventional device, the synergetic effect could be observed in the MoS 2 /PZT transistor device during its operation via optical modulation (Figure g,h) .…”

Section: Other 2d Layered Materials On Complex Oxidesmentioning

confidence: 99%

Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures

et al. 2018

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Most heterostructures are realized using materials within the same structural families, such as compound semiconductors, perovskite oxides, and more recently van der Waals heterostructures. [1][2][3][4] These conventional heterostructures have their advantages in the epitaxial matching of lattices with minimized structural defects. [5,6] They are also easy to apply and control the homogeneous epitaxial strain. Nevertheless, heterostructures with structurally distinct layers can also be conceived. If the interface between the dissimilar layers can be well defined, the heterostructure is equally feasible as the conventional heterostructures composed of the same structural families. This vastly expands the possibilities and potential of the heterostructures vastly as the combination of the materials is now multidimensional. Since the discovery of 2D layered materials (2DLM), including graphene, numerous studies have focused on their behavior on different substrates. Ideally, freestanding 2DLM is theoretically plausible, but they are rather difficult to achieve experimentally. In particular, homogeneous control of strain is rather challenging for freestanding 2D layers. Therefore, the choice of the substrate materials for the 2DLMs is of prime importance in discovering, studying, and utilizing novel properties. While Si-based semiconductor materials or simple metals such as Cu or Au have predominantly been utilized as the substrates for 2DLMs, [7,8] design of more exciting properties is achieved by adopting functional materials. When a 2DLM is fabricated on top of a substrate material, a heterostructure composed of two distinct materials is naturally achieved.Complex transition metal oxides (TMOs), or so-called functional oxides, foster a variety of exotic electrical and magnetic behaviors, including superconductivity, colossal magnetoresistance, 2D electron liquid, and multiferroicity. [9][10][11][12][13] The strongly correlated electronic nature originates from the strong polarizability of O ions in the interatomic scale, resulting in the versatile properties depending on the kind of transition metal element. With the recent advancement of atomic-scale epitaxy, an atomistic layer design of the physical properties of the TMOs is plausible, extending their potential with regard to "oxide electronics."In terms of the heterostructures, oxides have long served as the "gate dielectric layer" within conventional semiconductor technology. Considerable effort is directed toward the The marriage between a 2D layered material (2DLM) and a complex transition metal oxide (TMO) results in a variety of physical and chemical phenomena that cannot be achieved in either material alone. Interesting recent discoveries in systems such as graphene/SrTiO 3 , graphene/LaAlO 3 /SrTiO 3 , graphene/ferroelectric oxide, MoS 2 /SrTiO 3 , and FeSe/SrTiO 3 heterostructures include voltage scaling in field-effect transistors, charge state coupling across an interface, quantum conductance probing of the electrochemical activity, novel memory funct...

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“…The nonvolatile memory has been favored based on the graphene ferroelectric field effect transistor (FeFET); however, the on/off ratio of a graphene‐based transistor is small due to its zero bandgap. In turn, 2D semiconductors, such as TMDs, BP have trigged great attraction as the channel of FeFET for nonvolatile memories . Despite some progress, these organic FE gate–based devices still encounter obstacles including slow switching speed, high operation voltage, slow dipole dynamics, and low durability .…”

mentioning

confidence: 99%

Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT‐Gated Black Phosphorus Transistor

Xie

Chen

Dong

et al. 2019

Adv Elect Materials

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and weak charge storage capability with the size reduction. [4][5][6][7] To this end, ferroelectric random access memory (FeRAM) becomes one of the growing number of alternative technologies, which shows great advantages referring to the faster write performance and much greater maximum read/write endurance. [8,9] Traditional FeRAM is in a single capacitance structure, composed of ferroelectric (FE) materials with spontaneous polarization and top/bottom electrodes. It achieves two stable nonvolatile states as "0" and "1" to implement information storage with the application of electric fields. [10][11][12][13] Despite the great promise it holds, the commercial prospect of FeRAM is hampered by virtue of low integration. In particular, the read operation of FeRAM is destructive and reprogramming is needed after each readout process, resulting in high power consumption and prolonged readout time. [13,14] While, the drawbacks of a single capacitor-type FeRAM can be ameliorative if the device structure replaced by field effect transistor (FET), which benefits from its nondestructive readout operation and excellent compatibility with the current complementary metal-oxide-semiconductor technology. [15][16][17][18] By this means, the FE materials, served as gate insulator, are combined with semiconductors to form a synergistic heterostructure system with novel functionalities.Relative to conventional semiconductors, 2D ones, such as transition metal dichalcogenides (TMDs) [19] and black phosphorus (BP), [20,21] are more suitable to construct of synergistic heterostructure devices. On one hand, 2D materials enable versatile heterostructure integration with other 1D, 2D, and 3D counterparts through van de Waals coupling. More significantly, atomically thin characteristic of 2D materials is prone to high integration density and provides convenience for gating tunability. Lead zirconate titanate (PZT)-gated few-layer graphene have been previously reported to process an extremely high mobility of µ ∼ 7 × 10 4 cm 2 V −1 s −1 . [22] It has been also reported that FE material as gating dielectric can tune the transport behavior and improve electrical performance of the 2D FETs. [23][24][25][26] Thereby, the combination of 2D semiconductors and FE materials has potential to provide an excellent platform Ferroelectric-field-effect-transistor (FeFET) memory, characterized by its nonvolatile, nondestructive readout operation and low power consumption, has attracted tremendous attention in the development of next-generation random-access memory. However, the electrical reading processes in conventional FeFETs may attenuate the ferroelectric (FE) polarization and lead to readout crosstalk. A photoelectric-type FeFET memory with alternative readout through 2D black phosphorus (BP)/lead zirconate titanate (PZT) heterostructures is developed. Based on charge-mediated electric-field control, a unique polarization-dependent photoresponse is observed, resulting in both positive photoconductivity (PPC) and negative photoconductivity (NPC) in...

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Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric

Cited by 49 publications

References 23 publications

Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free Ba_xSr_1‐xTiO₃ and MoS₂ Channel

Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free Ba_xSr_1‐xTiO₃ and MoS₂ Channel

Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures

Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT‐Gated Black Phosphorus Transistor

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Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric

Cited by 49 publications

References 23 publications

Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free BaxSr1‐xTiO3 and MoS2 Channel

Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free BaxSr1‐xTiO3 and MoS2 Channel

Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures

Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT‐Gated Black Phosphorus Transistor

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Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free Ba_xSr_1‐xTiO₃ and MoS₂ Channel

Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free Ba_xSr_1‐xTiO₃ and MoS₂ Channel