Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT‐Gated Black Phosphorus Transistor

Abstract

and weak charge storage capability with the size reduction. [4][5][6][7] To this end, ferroelectric random access memory (FeRAM) becomes one of the growing number of alternative technologies, which shows great advantages referring to the faster write performance and much greater maximum read/write endurance. [8,9] Traditional FeRAM is in a single capacitance structure, composed of ferroelectric (FE) materials with spontaneous polarization and top/bottom electrodes. It achieves two stable nonvolatile states as "0" and "1" to implement information storage with the application of electric fields. [10][11][12][13] Despite the great promise it holds, the commercial prospect of FeRAM is hampered by virtue of low integration. In particular, the read operation of FeRAM is destructive and reprogramming is needed after each readout process, resulting in high power consumption and prolonged readout time. [13,14] While, the drawbacks of a single capacitor-type FeRAM can be ameliorative if the device structure replaced by field effect transistor (FET), which benefits from its nondestructive readout operation and excellent compatibility with the current complementary metal-oxide-semiconductor technology. [15][16][17][18] By this means, the FE materials, served as gate insulator, are combined with semiconductors to form a synergistic heterostructure system with novel functionalities.Relative to conventional semiconductors, 2D ones, such as transition metal dichalcogenides (TMDs) [19] and black phosphorus (BP), [20,21] are more suitable to construct of synergistic heterostructure devices. On one hand, 2D materials enable versatile heterostructure integration with other 1D, 2D, and 3D counterparts through van de Waals coupling. More significantly, atomically thin characteristic of 2D materials is prone to high integration density and provides convenience for gating tunability. Lead zirconate titanate (PZT)-gated few-layer graphene have been previously reported to process an extremely high mobility of µ ∼ 7 × 10 4 cm 2 V −1 s −1 . [22] It has been also reported that FE material as gating dielectric can tune the transport behavior and improve electrical performance of the 2D FETs. [23][24][25][26] Thereby, the combination of 2D semiconductors and FE materials has potential to provide an excellent platform Ferroelectric-field-effect-transistor (FeFET) memory, characterized by its nonvolatile, nondestructive readout operation and low power consumption, has attracted tremendous attention in the development of next-generation random-access memory. However, the electrical reading processes in conventional FeFETs may attenuate the ferroelectric (FE) polarization and lead to readout crosstalk. A photoelectric-type FeFET memory with alternative readout through 2D black phosphorus (BP)/lead zirconate titanate (PZT) heterostructures is developed. Based on charge-mediated electric-field control, a unique polarization-dependent photoresponse is observed, resulting in both positive photoconductivity (PPC) and negative photoconductivity (NPC) in...

Ferroelectric Photovoltaic Materials and Devices

“…In 1980s, when high-quality thin film preparation technology made a breakthrough, the development of the ferroelectric thin-films synthesizing technology was accelerated worldwide. [17,38,39] After a long period of exploration, ferroelectric crystals with different crystal structures have been developed. [40,41] Based on crystal structures, ferroelectric materials have been classified into two main categories, including hydrogenbonded ferroelectrics and perovskite-type ferroelectrics.…”

“…[158] There are a variety of applications for ferroelectric materials. Currently, the main focus is on ferroelectric storage [15][16][17]159] and ferroelectric photovoltaics. [25,26,[160][161][162] At present, bandgap control and polarization are commonly used methods to boost the performance of ferroelectric photovoltaic devices.…”

“…In 1980s, when high‐quality thin film preparation technology made a breakthrough, the development of the ferroelectric thin‐films synthesizing technology was accelerated worldwide. [ 17,38,39 ]…”

“…[14] With controlled spontaneous polarization under an external electric field, ferroelectric materials show great potential for applications in storage and sensor, and currently occupy a very important position in the nonvolatile storage industry. [15][16][17] Ferroelectric materials, as the light-absorbing layer of ferroelectric photovoltaic devices, also show significant potential in photovoltaics. [18][19][20] Different from the traditional solar cells, ferroelectric materials have a unique photovoltaic mechanism.…”

Ferroelectric memory: state-of-the-art manufacturing and research

“…[88][89][90][91]). Примером такого решения является фотоэлектрическая память (с активацией считывания облучением), которую рассматривают в качестве элементов оптических систем, основанная на многослойной конструкции с использованием оксидного проводника LaNiO 3 , выращенного на нем слоя PZT и нескольких монослоев черного фосфора (BP, метод эксфолиации) [88]. В работе [89] при создании гетероструктуры HfZrO x /MoS 2 для формирования наноразмерного слоя дихалькогенида применен CVD метод.…”