Nonvolatile Crossbar Switch Using $\hbox{TiO}_{x}/ \hbox{TaSiO}_{y}$ Solid Electrolyte

Tada, Munehiro; Sakamoto, Toshitsugu; Banno, Naoki; Aono, Masakazu; Hada, H.; Kasai, N.

doi:10.1109/ted.2010.2051191

Cited by 41 publications

(30 citation statements)

References 26 publications

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“…This device structure can be classified as a CBRAM that is composed of a solid electrolyte layer and a thin oxide layer (i.e., a CBRAM with double switching layers), as in earlier works that showed stable ReRAM switching. 19,62,67,68 The thick CF (including the Cu deposit) in the solid electrolyte layer acts as a narrow TE that limits the actual device size (i.e., the switching region), while the repetition of the sharp switching is thought to occur because of the thin CF in the oxide. To realize stable switching cycles, it is important to control the power such that it does not erase the thick CF in the solid electrolyte layer.…”

Section: Switching Schemesmentioning

confidence: 99%

Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

et al. 2016

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Section: Switching Schemesmentioning

confidence: 99%

Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

et al. 2016

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“…The output voltage to the substrate was swept from 0 to 7 V, from 7 to À2 V, and back to 0 V. The I-V curve indicates hysteresis characteristics, which were similar to those found in other studies on solid electrolyte ReRAMs. [10][11][12][13][14][15][16][19][20][21][22][23][24][25] A set of TEM images corresponding to those in Fig. 4 have been presented in Fig.…”

Section: Sample Preparation and Characterization 37mentioning

confidence: 99%

Analysis of resistance switching and conductive filaments inside Cu-Ge-S using in situ transmission electron microscopy

et al. 2012

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In situ transmission electron microscopy (TEM) was carried out to investigate the dynamics of resistance switching in a solid electrolyte, Cu-Ge-S. By applying voltage to Pt-Ir/Cu-Ge-S/Pt-Ir, where Pt-Ir constituted the electrodes, a deposit containing conductive filaments composed mainly of Cu was formed around the cathode. As voltage continued to be applied, the deposit grew and finally narrow conductive filaments made contact with the anode. This corresponded to resistance switching from high-to low-resistance states (HRS and LRS). By alternating the voltage, the deposit contracted toward the cathode and detached from the anode. The resistance immediately changed from LRS to HRS. By applying voltage, the deposit containing Cu-based filaments grew and shrank, and resistance switching occurred at the electrolyte-anode interface. This conductive filament-formation model, which was recently reported, was experimentally confirmed with TEM through dynamic observations of the deposit-containing filaments.

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“…3 Many previous studies reported resistance switching in solid electrolytes such as AgGeS, [4][5][6][7] CuGeS, 5 Cu 2 S, 8 Ag 2 S, 9,10 Ta 2 O 5 , 3,11 Cu-SiO 2 , 12 and bilayer-types. 13,14 The mechanism of resistance switching is attributed to the formation and disappearance of the conductive filament in the solid electrolyte. When a bias voltage is applied, the ions generated at the anode are thought to migrate toward the cathode where they undergo reduction and become metal atoms.…”

mentioning

confidence: 99%

In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching

Fujii¹,

Arita²,

Takahashi³

et al. 2011

Applied Physics Letters

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An in situ transmission electron microscopy ͑TEM͒ analysis of a solid electrolyte, Cu-GeS, during resistance switching is reported. Real-time observations of the filament formation and disappearance process were performed in the TEM instrument and the conductive-filament-formation model was confirmed experimentally. Narrow conductive filaments were formed corresponding to resistance switching from high-to low-resistance states. When the resistance changed to high-resistance state, the filament disappeared. It was also confirmed by use of selected area diffractometry and energy-dispersive x-ray spectroscopy that the conductive filament was made of nanocrystals composed mainly of Cu. Cu-SiO 2 , 12 and bilayer-types. 13,14 The mechanism of resistance switching is attributed to the formation and disappearance of the conductive filament in the solid electrolyte. When a bias voltage is applied, the ions generated at the anode are thought to migrate toward the cathode where they undergo reduction and become metal atoms. 8 Contrarily, an opposite bias voltage dissolves the metal composing filaments into the solid electrolyte.11 Therefore, an analysis of the conductive filament must provide important information for understanding this switching mechanism. Recently, conductive filament, which is formed in not only cation-type but also in aniontype electrolytes, was observed by scanning electron microscopy ͑SEM͒. 5,15,16 However, no detailed experimental results to confirm the existence of the filament during the switching process have been reported. Therefore, in situ transmission electron microscopy ͑TEM͒ with simultaneous electrical measurements has attracted a great deal of attention. 10,[17][18][19][20][21] In this letter, we use this in situ TEM method to reveal the switching mechanism of a solid electrolyte. Real-time observations of the filament formation and disappearance process were performed with the TEM instrument. We also clarified the structure and composition of the filament by the use of selected area diffractometry ͑SAD͒ and energydispersive x-ray spectroscopy ͑EDX͒.For the in situ TEM experiments, 21 commercially available Pt-Ir tips for scanning tunneling microscopy were further sharpened by ion milling. One Pt-Ir tip was used as the substrate and the other was used as a counter electrode. CuGeS thin films were deposited at room temperature by rf sputtering on Pt-Ir substrate. Since the substrate and the counter electrode of Pt-Ir were different in shape, the structure of Pt-Ir/Cu-GeS/Pt-Ir was asymmetric. The atomic composition of the sample layer was analyzed by means of EDX. The proportion of Cu:Ge:S was 4:4:2. The film thickness was between 8 and 60 nm, and no remarkable difference depending on thickness was recognized. The system was composed of a custom-made TEM holder with a PCcontrolled operating system. [21][22][23] The TEM instrument used mainly was a JEM-2010 microscope ͑200 kV, C s = 0.5 mm͒, having a vacuum of about 10 −5 Pa. The conduction properties were measured between the Pt-Ir counter...

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Nonvolatile Crossbar Switch Using $\hbox{TiO}_{x}/ \hbox{TaSiO}_{y}$ Solid Electrolyte

Cited by 41 publications

References 26 publications

Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

Analysis of resistance switching and conductive filaments inside Cu-Ge-S using in situ transmission electron microscopy

In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching

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