Inorganic/organic semiconductor hybrid structures offer new functionalities that can not be achieved by the individual components alone. In order to benefit from the complementary properties of the two material systems, electronic coupling across the inorganic/organic interface is required. Nonradiative energy transfer [1][2][3][4] as well as charge-carrier separation [5] could be observed on properly designed specimens. These findings are not only interesting from a fundamental point of view, but are also of direct practical relevance. Combination of the high carrier mobility in inorganic semiconductors with the very strong and easily wavelength-tuneable absorption-emission features of organic molecules opens up new vistas for light-emitting or photovoltaic devices.Two approaches regarding the growth of semiconductor hybrid structures are pursued currently. One approach employs wet-chemically produced semiconductor nanocrystals, the other relies on epitaxial semiconductor quantum well (QW) structures. For the latter, ZnO/ZnMgO, [1] InGaN/GaN, [2] and GaAs/ AlGaAs [3] have been employed successfully. High purity standards and excellent structural control are merits of epitaxial growth. However, the epitaxial hybrid structures fabricated so far have in common that a sole organic layer is merely deposited on top of the inorganic QW. Subsequent overgrowth by the inorganic material appeared to be impossible because typical temperatures applied in semiconductor epitaxy range between about 500 and 1000 8C and are thus not compatible with organic molecules. As found out recently, [6,7] ZnO and some of its ternaries are remarkable exceptions as these compounds can be grown with high quality by molecular beam epitaxy (MBE) at temperatures as low as room temperature. Exploiting this unique potential, all-epitaxial periodic organic/inorganic hybrid structures come into reach.There are several crucial points, however, which have to be solved in order to prepare such hybrid structures. First, the molecules must survive the overgrowth with their electronic and optical properties remaining unchanged. ZnO is grown by radical-source MBE with the oxygen being provided by an rf-plasma source that generates a flux of highly reactive atomic species on the sample surface. It must be assured that the molecules survive such a harsh environment. Second, electronic coupling between the subcomponents must persist and, third, the inorganic overlayer should preferably grow in a coherent epitaxial mode. In this work, we will concentrate on the first two points.Moreover, we will demonstrate that ZnO/organic/ZnO sandwich structures form planar waveguides that support stimulated emission of the enclosed organic layer.The inorganic/organic sandwich (IOS) structures are grown under ultrahigh vacuum conditions in a MBE apparatus equipped with interconnected growth chambers for the two material systems. This ensures well-defined organic/inorganic interfaces free of extrinsic defects. For the inorganic part below the organic layer, the standard epita...