Nonplanar VLSI Device Analysis Using the Solution of Poisson's Equation

Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study

“…Dirichlet boundary conditions are applied to electrons in the DG equation (3) at the contacts and Si/Si0 interface introducing charge neutrality and vanishingly small values, respectively, and Neumann boundary conditions are applied at all other boundaries of the solution domain. One step Newton-SOR iterations are used for solving both the Poisson equation (2) and the DG equation (3) [30]. At the beginning of the self-consistent iteration, the nonlinear Poisson equation is solved using Boltzmann statistics for both electrons and holes.…”

Computer Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices

“…Improvewent on these IC processing factors, time and temperature, are important prerequisites for development of VLSI technololy, where three dimensional device sealing call-for stricter control of movement of previous diffusions. Moreover, it has been reported that oxidation induced stacking faults are suppressed or even eliminated by taking advantage of lower temperatures [1,2]. Stacking fault defects have been associated with leaky junctions.…”