Computer Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices

Plummer, J.D.; Dutton, R.W.; Gibbons, J. F.; Meindl, J.D.

doi:10.21236/ada099925

Cited by 10 publications

(17 citation statements)

References 4 publications

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“…The operating conditions at which SiO2 layers are grown involve a temperature range usually between 800 ~ and 1100~ The film thickness of practical interest typically does not exceed a few hundred angstroms. In this case, all experimental data (1)(2)(3)(4)(5)(6)(7)(8)(9) show marked deviations from the behavior predicted by the so-called linear-parabolic equation (10). The latter equation, however, successfully describes the thermal growth of SiO~ layers for higher temperatures and/or for oxide thickness larger than 200-300A.…”

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confidence: 75%

“…First of all, it was observed that the pseudosteady-state approximation, obtained by setting the lhs of Eq. [3] equal to zero, is very reasonable. Actually, for the cases of practical interest, the oxide thickness obtained under this approximation differs from the value given by the original problem at most in the seventh significant digit.…”

Section: Thin Sio2 Filmsmentioning

confidence: 92%

“…Indeed, several different merely mathematical models have been proposed recently which adequately describe experimental data (1,3,(11)(12)(13); owing to their pure phenomenological origin, however, the intervening parameters are just data fitting variables, with no particular meaning. Important questions such as (i) what the main physical and chemical phenomena which govern the observed growth rate are, and (ii) what their suitable mathematical description is, are left unanswered by the purely empirical models.…”

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confidence: 99%

“…Ref. (3), to evaluate kr appears to be misleading, insofar as the intercept is not obtained by the true dt/d8 curve but rather on the straight line which extrapolates down to small thickness the linear behavior observed in the thick oxide region.…”

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confidence: 99%

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A Simplified Viscoelastic Model for the Thermal Growth of Thin SiO2 Films

Roda

Santarelli

Sarti

1985

J. Electrochem. Soc.

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Recently, thermal dry oxidation of silicon was quantitatively described by the present authors in a model accounting for the relaxation phenomena occurring in the oxide film. Clarity about the underlying physical mechanisms and satisfactory matching with existing data both make the model rather appealing; also, the well-known anomalous behavior encountered in the thin film region appears to be adequately predicted. The resulting numerical problem is rather complex when compared with other existing models. A simplified mathematical formulation of the mentioned model is proposed here. The viscoelastic relaxations occurring in the oxide layer are lumped into a time-dependent effective diffusivity for which an explicit expression was found in terms of the parent model parameters. A deviation of, at most, 2.3% in the oxidation rate was obtained by comparing the results from rigorous and simplified approach. The simplified model proposed requires numerical procedures as simple as for some previously existing models; it has the additional advantage of being written in terms of quantities which all have precise physical meanings and can be measured independently of the oxidation process.

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mentioning

confidence: 75%

Section: Thin Sio2 Filmsmentioning

confidence: 92%

mentioning

confidence: 99%

mentioning

confidence: 99%

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A Simplified Viscoelastic Model for the Thermal Growth of Thin SiO2 Films

Roda

Santarelli

Sarti

1985

J. Electrochem. Soc.

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“…The ellipsometry measurements were carried out on a Geartner ellipsometer having the He-Ne laser light source (A = 632SA). nseos e -sin e)}/720 (1 ) where A~ 6328~ is wavelength of light, e= 70• is incidence angle of ' .,…”

mentioning

confidence: 99%