Nonplanar VLSI device analysis using the solution of Poisson's equation

Greenfield, J.A.; Dutton, R.W.

doi:10.1109/t-ed.1980.20066

Cited by 131 publications

(11 citation statements)

References 25 publications

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“…Notice that this piecewise velocity-field approximation has been commonly used in MOS modeling, and its validity supported by previous works , Ortiz-Conde et al 1996, Greenfield and Dutton 1980, Toh et al 1988.…”

Section: Model Developmentsupporting

confidence: 67%

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An analytical drain current model of short-channel MOSFETs including source/drain resistance effect

Liou

et al. 2006

International Journal of Electronics

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2006)An analytical drain current model of short-channel MOSFETs including source/drain resistance effect, In this paper, the DC characteristics of MOSFETs are investigated by means of an analytical approach with considerations of the source/drain parasitic resistance (R S /R D ). Experimental data of MOS devices for DRAM design and results of TCAD simulation are used to verify the accuracy of theoretical calculation. It is found that both the R S and R D can induce a large reduction in the drain current in the linear region, but only the source resistance can cause a large reduction in the drain current in the saturation region. Moreover, the drain current deduction due to the R S /R D increases with decreasing channel length and oxide thickness.

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Section: Model Developmentsupporting

confidence: 67%

“…The model parameters in (3) can be easily obtained by fitting (2) to the measured threshold voltages of MOSFETs having various channel lengths. The electron velocity d (y) including the effect of velocity saturation is given by Schroeder 1990, Greenfield and Dutton 1980, Toh et al 1988 …”

Section: Model Developmentmentioning

confidence: 99%

An analytical drain current model of short-channel MOSFETs including source/drain resistance effect

Liou

et al. 2006

International Journal of Electronics

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“…In order to gain further insight into the dependence of the breakdown voltage on various device parameters, computer simulations of the field in the device structure were run using GEMINI (TANDEM), a 2-D Poisson solver [5].…”

Section: Simulation Resultsmentioning

confidence: 99%

“…The breakdown was taken to occur at the drain bias at which the maximum field reached 4x10 5 V/cm, the critical field for a doping of ixl0 1 6 cm-3 [6].…”

Section: Simulation Resultsmentioning

confidence: 99%

Offset-Gate Structures for Increased Breakdown Voltages in Silicon-On-Insulator Transistors

Drowley

Kamins

1984

MRS Proc.

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An offset-gate structure was used to fabricate p-channel MOS transistors in laser-recrystallized silicon-on-insulator (SOI) films.The breakdown voltage increased from about -18 V with a conventional gate structure to about -38 V with the offset gate and was then limited by bulk breakdown in the film, rather than by the high fields near the gate drain overlap region.Simulations indicate that breakdown voltages of about -60 V can be achieved in the structure used, provided that the back-surface fixed-charge density is limited to lX10" cm-2

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“…Regarding HCEs, MOSFETs and heterostructure devices have considerably been studied and modelled [1][2][3][4][5][6]. It is well known that threshold voltage is MOSFET's important characteristic and there have been many efforts to analytically model the threshold voltage for MOSFETs, particularly for short channel transistors [7][8][9][10][11][12][13][14]. An accurate model is required to predict the threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Analytical Threshold Voltage Modelling of Pseudomorphic Si_0.8Ge_0.2p-Channel MOSFETs

Ansaripour

2011

Acta Phys. Pol. A

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In this work we present an analytical model of the threshold voltage of SiGe p-channel metal oxide semiconductor field effect transistor based on the solution of the two-dimensional Poisson's equation and the ground state wave function of Fang and Howard, and taking into account the space charge in the channel and its effect on the surface potential. It is seen that the experimental data are well fitted within the experimental error that shows the appropriateness of the implemented model. Also comparing the calculated results to that of the calculated from the available recent reported models indicates a reasonable improvement to them.

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Nonplanar VLSI device analysis using the solution of Poisson's equation

Cited by 131 publications

References 25 publications

An analytical drain current model of short-channel MOSFETs including source/drain resistance effect

An analytical drain current model of short-channel MOSFETs including source/drain resistance effect

Offset-Gate Structures for Increased Breakdown Voltages in Silicon-On-Insulator Transistors

Two-Dimensional Analytical Threshold Voltage Modelling of Pseudomorphic Si_0.8Ge_0.2p-Channel MOSFETs

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Nonplanar VLSI device analysis using the solution of Poisson's equation

Cited by 131 publications

References 25 publications

An analytical drain current model of short-channel MOSFETs including source/drain resistance effect

An analytical drain current model of short-channel MOSFETs including source/drain resistance effect

Offset-Gate Structures for Increased Breakdown Voltages in Silicon-On-Insulator Transistors

Two-Dimensional Analytical Threshold Voltage Modelling of Pseudomorphic Si0.8Ge0.2p-Channel MOSFETs

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Two-Dimensional Analytical Threshold Voltage Modelling of Pseudomorphic Si_0.8Ge_0.2p-Channel MOSFETs