“…For instance, the apparent gap measured with tunneling spectroscopy can significantly differ from the intrinsic bandgap in the density of states of the sample, as it has been observed, e.g., on the surfaces of Ge(111) [9], FeS 2 (100) [10], and ZnO [11]. Moreover, TIBB can also cause the ionization of donors/acceptors in the semiconductor [12][13][14], and the effect has even been used in tip-induced quantum dot experiments [15]. Being able to quantitatively calculate TIBB is necessary for the interpretation of data: Only if the values of TIBB are known, can the intrinsic bandgap be retrieved from the data, and the binding energies of the donors/acceptors can be extracted.…”