2001
DOI: 10.1103/physrevb.63.201301
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Nonlocality of the exchange interaction probed by scanning tunneling spectroscopy

Abstract: The energy states of the tip induced quantum dot are investigated in a magnetic field as a function of the tip position with respect to the surface. To study the influence of potential perturbations on the exchange interaction in the quantum dot, emphasis is given on the Landau and spin levels probed at positive bias. Mapping of the spatial dependence of the peak energies and comparison with the surface potential map-reconstructed from the analysis of scattering states around ionized dopants-reveals that the f… Show more

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Cited by 22 publications
(9 citation statements)
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References 16 publications
(7 reference statements)
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“…22,23 The low gap provides, in addition, a relatively large Rashba splitting 24 as well as a strong Landau 25 and spin splitting. 26 This 2DES has been probed previously by STS revealing transitions from strong to weak localization, 27 a spatially continuous wave pattern caused by multiple scattering, 28 drift states in magnetic field 29 and the local density of states across quantum Hall transitions. 30 Within this paper, we describe STS measurements of a 2DES, which is induced by a minute amount of Cs (1.5 % of a monolayer) on the strongly p-doped InSb(110) surface (N A ≃ 10 24 m −2 ).…”
Section: Introductionmentioning
confidence: 76%
“…22,23 The low gap provides, in addition, a relatively large Rashba splitting 24 as well as a strong Landau 25 and spin splitting. 26 This 2DES has been probed previously by STS revealing transitions from strong to weak localization, 27 a spatially continuous wave pattern caused by multiple scattering, 28 drift states in magnetic field 29 and the local density of states across quantum Hall transitions. 30 Within this paper, we describe STS measurements of a 2DES, which is induced by a minute amount of Cs (1.5 % of a monolayer) on the strongly p-doped InSb(110) surface (N A ≃ 10 24 m −2 ).…”
Section: Introductionmentioning
confidence: 76%
“…For instance, the apparent gap measured with tunneling spectroscopy can significantly differ from the intrinsic bandgap in the density of states of the sample, as it has been observed, e.g., on the surfaces of Ge(111) [9], FeS 2 (100) [10], and ZnO [11]. Moreover, TIBB can also cause the ionization of donors/acceptors in the semiconductor [12][13][14], and the effect has even been used in tip-induced quantum dot experiments [15]. Being able to quantitatively calculate TIBB is necessary for the interpretation of data: Only if the values of TIBB are known, can the intrinsic bandgap be retrieved from the data, and the binding energies of the donors/acceptors can be extracted.…”
Section: Introductionmentioning
confidence: 99%
“…The QD state is formed below a silicon/vacuum surface when the bands are locally bent downwards by the tip due to a bias V applied to a reservoir ( Fig. 1b) [57,58]. The QD and donor are contained in a lightly doped region, above a highly doped reservoir and below a (100) hydrogen terminated surface (Fig.…”
mentioning
confidence: 99%