Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion

Alim, Mohammad Abdul; Rezazadeh, A.A.; Gaquière, C.; Ali, Mayahsa M.; Zhang, Yongjian; Haris, Norshakila; Kyabaggu, Peter B. K.

doi:10.1109/eumc.2015.7345842

Cited by 7 publications

(3 citation statements)

References 10 publications

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“…It cannot be repeatedly achievable the nonlinearities of a device using this model as the conductance terms G ds , G ds2 , G ds3 as well as the cross terms (m 11 , m 12 , m 21 ) are relatively very small compared to the transconductance and its derivatives. With successive differentiation in the process of calculations generate enormous errors and noise [18,19]. In addition, frequency, power, and temperature response of G ds , G ds2 , G ds3 , m 11 , m 12 , m 21 were very low and hence ignored.…”

Section: Device Fabrication Measurement and Modellingmentioning

confidence: 99%

“…Several nonlinear sources of microwave components are identified straightforwardly [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] as biasing, voltage gain, frequency, dissimilarity in sample variation, gate dimensions, internal capacitance, transconductance and output conductance along with their derivatives and cross terms using two-tone technique. Furthermore, it was identified that the magnitude of output conductance, g ds and its derivatives (g ds2 , g ds3 ) were remarkably small against transconductance, g m and its derivatives (g m2 , g m3 ) [18,19]. This implies that the cross terms of the conductance and transconductance are also very low and hence, their impact on the nonlinearity of a device is also very low.…”

Section: Introductionsmentioning

confidence: 99%

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On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT

Ali¹,

Alim²,

Rezazadeh³

et al. 2019

Semicond. Sci. Technol.

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This paper investigates the correlation between intermodulation distortion and RF transconductance in AlGaN/GaN high electron mobility transistor (HEMT) grown on SiC Substrate. Two-tone intermodulation distortion measurements were carried out across a comprehensive biasing range changing the frequency and ambient temperature and input power to point out this correlation. The main contribution is that, the correlation between intermodulation distortion and the behavior of transconductance and its derivatives (G m , G m2 , and G m3 ) is investigated and summarized. It is demonstrated that the nonlinearity is directly correlated to the RF transconductance behavior where the peak values of the fundamental IMD arise at the peak of G m and the null points in IMD 2 and IMD 3 arises when G m2 and G m3 alters from positive to negative magnitudes. The changes in frequency, input power and temperature affect the threshold voltage V T which in turn impacts on that phenomenon. As the nulls/notches are crucial indicator for identifying minimum distortion level, an empirical model for null's current is develop in correlation with transconductance. Finally, the measured and simulated IMDs as well as the null's current shows very good agreement. In addition, the small-signal measurement and as well as the de-embedding of the device has been done before the IMD study. The power gain and its derivatives also compared to the transconductance. This analysis is important to know how the intermodulation distortion products behave and to identify a distortion free device at the particular operation point of interest.

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Section: Device Fabrication Measurement and Modellingmentioning

confidence: 99%

Section: Introductionsmentioning

confidence: 99%

On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT

Ali¹,

Alim²,

Rezazadeh³

et al. 2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…At higher frequency level, the total transconductance of the device is a combination of linear (DC part) and nonlinear (ac part). As there will be a strong coupling between DC and ac voltages which affects the total applied input bias as well as the output current I ds , output conductance g ds , RF transconductance g m , and gate-source capacitance C gs [21]. Hence, all the output power components reduce with increasing frequency.…”

Section: The Effect Of the Presence Of 3d Components Above The Active...mentioning

confidence: 99%

Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology

Alim

Ali

Haris

et al. 2017

Semicond. Sci. Technol.

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This study focuses on the characterization of two 0.5 μm gate-length double heterojunction AlGaAs/InGaAs/GaAs pHEMTs using pre and post fabricated vertical oriented multilayer 3D monolithic microwave integrated (MMIC) circuit technology. The effects of the presence of 3D components above the active layer were accomplished by means of capacitance-voltage measurement, on-wafer DC and S-parameter measurements and two-tone intermodulation distortion measurement. The barrier height, donor concentration in the barrier layer, existing two-dimensional electron gas, output current, off and on state leakage, transconductance, cut-off frequency, small signal model parameters, gain, minimum noise figures and nonlinear distortion behavior reveals no significant performance degradation. Furthermore the fundamental device properties such as the depletion depth d, the sheet charge densities of the 2-DEG, n s , filed dependent mobility, μ, and the effective carrier velocity, v eff is not much affected due to multilayer processing. Less than 5% changes in magnitude of the device parameters are realized between the pre and post fabricated multilayer 3D MMIC technology. These effective comparisons of the both device are useful for future designs and optimizations of multilayer vertical stacked 3D MMICs.

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Investigation of nonlinear distortion in double heterojunction GaAs based pHEMT subject to frequency and temperature

Alim

Ali

Rezazadeh

2018

Solid-State Electronics

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Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion

Cited by 7 publications

References 10 publications

On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT

On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT

Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology

Investigation of nonlinear distortion in double heterojunction GaAs based pHEMT subject to frequency and temperature

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