Nonlinearities in a MESFET distributed model

Martín-Guerrero, Teresa M.; Camacho‐Peñalosa, C.

doi:10.1002/(sici)1522-6301(199607)6:4<243::aid-mmce3>3.0.co;2-o

Cited by 4 publications

References 4 publications

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Waveform engineering: State-of-the-art and future trends (invited paper)

Raffo

Vadalà

Bosi

et al. 2016

Int. J. RF Microw. Comput. Aided Eng.

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The term waveform engineering denotes all those circuit design techniques that are based on shaping the transistor voltage and current waveforms. From a general perspective, these design techniques can be grouped in two main categories according to the adopted design tool: measurement- and model-based. In the last two decades, thanks to the proliferation of setups enabling calibrated waveform acquisition at microwave frequencies, waveform engineering has attracted continuously increasing interest in the microwave engineering community. In this article, a comprehensive analysis of the waveform-engineering based design techniques is reported, paying particular attention to the advantages and drawbacks associated to each approach

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Waveform engineering: State-of-the-art and future trends (invited paper)

Raffo

Vadalà

Bosi

et al. 2016

Int. J. RF Microw. Comput. Aided Eng.

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Large-signal distributed millimeter-wave multifinger pHEMT modeling using time-domain technique

Aliakbari

Abdipour

Mirzavand

et al. 2017

Int J RF Microw Comput Aided Eng

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The finite‐difference time‐domain (FDTD) method is used for the large‐signal modeling of a multifinger pHEMT, which is considered as five nonlinear coupled distributed transmission lines. The developed model, which is based on the exact physical layout of multifinger pHEMT, not only accurately describes the propagation effects along the electrodes at higher frequencies but it also includes major nonlinearities of the I–V and Q–V characteristics. Using the transmission line theory, a proper nonlinear equivalent lumped circuit model is allocated for the differential length of the quintuple‐line transistor and the nonlinear active multiconductor transmission line (NAMCTL) equations are derived. These nonlinear, coupled differential equations are numerically solved using the FDTD method. The proposed model is applied to a 100 nm GaAs pHEMT and the simulation results are compared with the results of conventional sliced model in Keysight ADS simulator. The developed transient nonlinear model accurately predicts both the S‐parameters (1–150 GHz) and large‐signal power performances especially at millimeter wave frequency range. The proposed model can be useful in design and analysis of various types of high‐frequency nonlinear integrated circuits.

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