Nonlinear optical properties of chalcogenide glasses: Observation of multiphoton absorption

Bindra, K. S.; Bookey, Henry T.; Kar, A. K.; Wherrett, B. S.; Liu, X.; Jha, Animesh

doi:10.1063/1.1402158

Cited by 113 publications

(61 citation statements)

References 8 publications

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“…1(a), the best fits result in a 3PA coefficient of 0.016 cm 3 /GW 2 for the ZnO crystal. It has been pointed out that 3PA Z scans are considerably different from 2PA Z-scans [24]. Our results in Fig.…”

Section: Z-scan Theories On Multiphoton Absorberssupporting

confidence: 77%

Three-photon absorption in ZnO and ZnS crystals

He¹,

Qu²,

Li³

et al. 2005

Opt. Express

209

131

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Abstract:We report a systematic investigation of both three-photon absorption (3PA) spectra and wavelength dispersions of Kerr-type nonlinear refraction in wide-gap semiconductors. The Z-scan measurements are recorded for both ZnO and ZnS with femtosecond laser pulses. While the wavelength dispersions of the Kerr nonlinearity are in agreement with a two-band model, the wavelength dependences of the 3PA are found to be given by (3E photon /E g -1)5/2 (3E photon /E g ) -9 . We also evaluate higher-order nonlinear optical effects including the fifth-order instantaneous nonlinear refraction associated with virtual three-photon transitions, and effectively seventh-order nonlinear processes induced by three-photon-excited free charge carriers. These higher-order nonlinear effects are insignificant with laser excitation irradiances up to 40 GW/cm 2 . Both pump-probe measurements and three-photon figures of merits demonstrate that ZnO and ZnS should be a promising candidate for optical switching applications at telecommunication wavelengths. 1951-1955 (1997

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Section: Z-scan Theories On Multiphoton Absorberssupporting

confidence: 77%

Three-photon absorption in ZnO and ZnS crystals

He¹,

Qu²,

Li³

et al. 2005

Opt. Express

209

131

View full text Add to dashboard Cite

show abstract

“…We have found wavelength-dependent measurements of the nonlinear index, n 2 , for arsenic sulfide from different data sources [150,[165][166][167][168][169][170][171][172][173][174]. As shown in Figure 3, although slightly scattered, these n 2 values in arsenic sulfide are as high as those in silicon and would not be strongly wavelength-dependent beyond 1.55 µm, because it is longer than the half-bandgap wavelength.…”

Section: Methodsmentioning

confidence: 87%

“…For example, As 2 S 3 and As 2 Se 3 have bandgap energies around 2.26 eV [150,151] and 1.77 eV [152], and they are transparent up to 12 and 15 µm [153], respectively. Although in this paper chalcogenide glasses are not considered a material for the core of a waveguide, one may use them for waveguide cladding and slot layer [53,58].…”

Section: Methodsmentioning

confidence: 99%

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

et al. 2014

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Group IV photonics hold great potential for nonlinear applications in the near-and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octavespanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.

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“…Many reports indicate that a two-photon absorption process is responsible for the optical nonlinearities observed in chalcogenide glasses. Recently, however, a multiphoton absorption process has been suggested for the nonlinearities observed in these glasses [29]. It was found that for 1.55 µm radiation, the ratios of band gap energy to photon energy are 2.8, 3.4, and 4.3 for As 2 S 3 -, GeS 2 -and TeO 2 -based samples, respectively.…”

Section: Nonlinear Optical Analysismentioning

confidence: 99%

Studies on In_x(As₂Se₃)_1-x thin films using variable angle spectroscopic ellipsometry (VASE)

Amin¹

2015

Materials Science-Poland

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The results of multi-angle ellipsometrical measurements of thermally evaporated In x (As 2 Se 3 ) 1−x (x = 0, 0.01, 0.05) films are presented. Optical parameters n and E g of thin In x (As 2 Se 3 ) 1−x films show that indium atoms were incorporated into the host matrix of As 2 Se 3 forming distinct features depending on the indium concentration. Refractive index, n, was found to decrease with the addition of In to the binary As 2 Se 3 . The real and imaginary parts of the dielectric function, ε and ε were also calculated from the obtained data and correlated with In concentration. It was found that ε decreases with the increase of In content while ε increases with the increase of In content. Absorption edge is shifted towards lower photon energy with the increase of In content. As a result, the optical energy gap decreases with increasing In content. This has been correlated with the chemical character of the additive as well as with the structural and bonding aspects of the amorphous composition. Nonlinear optical constants (χ (3) and n 2 ) were determined from linear optical parameters using semi-empirical relations in the long wavelength limit.

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Nonlinear optical properties of chalcogenide glasses: Observation of multiphoton absorption

Abstract: We report observation of four- and five-photon absorption in the chalcogenide glasses at the telecommunication wavelengths. The nonlinear refractive index is sufficiently large that the optical switching criterion is satisfied.

Cited by 113 publications

References 8 publications

Three-photon absorption in ZnO and ZnS crystals

Three-photon absorption in ZnO and ZnS crystals

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

Studies on In_x(As₂Se₃)_1-x thin films using variable angle spectroscopic ellipsometry (VASE)

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Nonlinear optical properties of chalcogenide glasses: Observation of multiphoton absorption

Abstract: We report observation of four- and five-photon absorption in the chalcogenide glasses at the telecommunication wavelengths. The nonlinear refractive index is sufficiently large that the optical switching criterion is satisfied.

Cited by 113 publications

References 8 publications

Three-photon absorption in ZnO and ZnS crystals

Three-photon absorption in ZnO and ZnS crystals

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

Studies on Inx(As2Se3)1-x thin films using variable angle spectroscopic ellipsometry (VASE)

Contact Info

Product

Resources

About

Studies on In_x(As₂Se₃)_1-x thin films using variable angle spectroscopic ellipsometry (VASE)