Nonlinear-Optic Silicon-Nanowire Waveguides

Yamada, Hirohito; Shirane, Masayuki; Chu, Tao; Yokoyama, Hiroyuki; Ishida, Shintaro; Arakawa, Yasuhiko

doi:10.1143/jjap.44.6541

Cited by 70 publications

(47 citation statements)

References 14 publications

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“…The waveguide dispersion and effective waveguide modal area were obtained using a fully vectorial beam propagation method. The nonlinear refractive index of silicon used to calculate γ from the effective area was varied within the range of reported values [23][24][25][26][27] to obtain the best match to measured data. Experimentally measured values for waveguide propagation losses and grating dispersion were used.…”

Section: Methodsmentioning

confidence: 99%

“…We report optimal compression factors as high as 7 at a low input peak power of 10 W. The requisite large acquired nonlinear phase for high compression factors is obtained at low input peak powers, owing to the large third order Kerr nonlinearity in silicon, high modal confinement in the carefully designed nanowire waveguide and, consequently, large nonlinear parameter, γ 20,[23][24][25][26] .…”

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confidence: 92%

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Monolithic nonlinear pulse compressor on a silicon chip

2010

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Projected demands in information bandwidth have resulted in a paradigm shift from electrical to optical interconnects. Switches, modulators and wavelength converters have all been demonstrated on complementary metal-oxide semiconductor compatible platforms, and are important for all optical signal and information processing. Similarly, pulse compression is crucial for creating short pulses necessary for key applications in high-capacity communications, imaging and spectroscopy. In this study, we report the first demonstration of a chip-scale, nanophotonic pulse compressor on silicon, operating by nonlinear spectral broadening from self-phase modulation in a nanowire waveguide, followed by temporal compression with an integrated dispersive element. Using a low input peak power of 10 W, we achieve compression factors as high as 7 for 7 ps pulses. This compact and efficient device will enable ultrashort pulse sources to be integrated with systems level photonic circuits necessary for future optoelectronic networks.

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Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 92%

Monolithic nonlinear pulse compressor on a silicon chip

2010

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“…Equation (11) shows that the free-carrier response has a linear and isotropic nature, because of the cubic rotational symmetry of a silicon crystal [102]. Equation (10) indicates how the spectral response of free carriers varies with optical frequency.…”

Section: Free-carrier Effectsmentioning

confidence: 99%

“…These features enable efficient nonlinear interaction of optical waves at relatively low power levels inside a short SOI waveguide (<5 cm long). For this reason, considerable effort has been directed in recent years toward investigating the nonlinear phenomena such as self-phase modulation (SPM) [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23], cross-phase modulation (XPM) [14,[24][25][26], stimulated Raman scattering (SRS) , and four-wave mixing (FWM) [61][62][63][64][65][66][67][68][69][70][71][72][73][74][75][76][77][78][79]. All of these nonlinear effects are currently being explored to realize a variety of optical functions on the chip scale.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear optical phenomena in silicon waveguides: modeling and applications

Lin¹,

Painter²,

Agrawal³

2007

Opt. Express

844

699

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Several kinds of nonlinear optical effects have been observed in recent years using silicon waveguides, and their device applications are attracting considerable attention. In this review, we provide a unified theoretical platform that not only can be used for understanding the underlying physics but should also provide guidance toward new and useful applications. We begin with a description of the third-order nonlinearity of silicon and consider the tensorial nature of both the electronic and Raman contributions. The generation of free carriers through two-photon absorption and their impact on various nonlinear phenomena is included fully within the theory presented here. We derive a general propagation equation in the frequency domain and show how it leads to a generalized nonlinear Schrödinger equation when it is converted to the time domain. We use this equation to study propagation of ultrashort optical pulses in the presence of self-phase modulation and show the possibility of soliton formation and supercontinuum generation. The nonlinear phenomena of cross-phase modulation and stimulated Raman scattering are discussed next with emphasis on the impact of free carriers on Raman amplification and lasing. We also consider the four-wave mixing process for both continuous-wave and pulsed pumping and discuss the conditions under which parametric amplification and wavelength conversion can be realized with net gain in the telecommunication band. 1678-1687 (2006). 4. R. A. Soref, S. J. Emelett, and W. R. Buchwald, "Silicon waveguided components for the long-wave infrared region," J. Opt. A: Pure Appl. Opt. 8, 840-848 (2006). 5. M. Dinu, F. Quochi, and H. Garcia, "Third-order nonlinearities in silicon at telecom wavelengths," Appl. Phys.Lett. 82, 2954-2956 (2003). 6. R. Claps, D. Dimitropoulos, V. Raghunathan, Y. Han, and B. Jalali, "Observation of stimulated Raman amplification in silicon waveguides," Opt. Express 11, 1731-1739 (2003). 7. H. K. Tsang, C. S. Wong, T. K. Liang, I. E. Day, S. W. Roberts, A. Harpin, J. Drake, and M. Asghari, "Optical dispersion, two-photon absorption, and self-phase modulation in silicon waveguides at 1.5 μm wavelength," Appl. Phys. Lett. 80, 416-418 (2002 3685-3697 (1973). 109. T. R. Hart, R. L. Aggarwal, and B. Lax, "Temperature dependence of Raman scattering in silicon," Phys. Rev. B 1, 638-642 (1970). 110. A. Zwick and R. Carles, "Multiple-order Raman scattering in crystalline and amorphous silicon," Phys. Rev. B 48, 6024-6032 (1993). 111. R. Loudon, "The Raman effect in crystals," Adv. Phys. 50, 813-864 (2001). 112. J. R. Sandercock, "Brillouin-scattering measurements on silicon and germanium," Phys. Rev. Lett. 28, 237-240 (1972). 113. M. Dinu, "Dispersion of phonon-assisted nonresonant third-order nonlinearities," IEEE J. Quantum Electron.39, 1498-1503 (2003).

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“…Second, the high index contrast not only allows sub-wavelength light confinement [42] but also makes it possible to form novel waveguiding structures. For example, when a nano-scale low-index layer is sandwiched between two high-index layers, a slot waveguide can be formed [43][44][45][46], with a large fraction of modal power trapped in the thin layer.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

et al. 2014

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Group IV photonics hold great potential for nonlinear applications in the near-and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octavespanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.

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Nonlinear-Optic Silicon-Nanowire Waveguides

Cited by 70 publications

References 14 publications

Monolithic nonlinear pulse compressor on a silicon chip

Monolithic nonlinear pulse compressor on a silicon chip

Nonlinear optical phenomena in silicon waveguides: modeling and applications

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

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