Nonlinear magneto‐optical phenomena of the third harmonic in semiconductors

Stramska, H.

doi:10.1002/pssb.2221160116

Cited by 3 publications

(2 citation statements)

References 6 publications

(3 reference statements)

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“…I n Si and Ge the nonlinearity due to the nonparabolicity of the conduction band is expected to be negligible. The nonlinearities associated with collisional processes can make large contributions to the magneto-optical phenomena [7]. I n [l, 61 it has been shown in some experiments with InSb and InAs that mobile carriers can be responsible for the nonlinear optical effect.…”

Section: O I L I'mentioning

confidence: 99%

“…It leads to a large enhancement due to magnetic resonance in the higher harmonics and optical mixing. The magneto-optical effects of the third harmonic generated by free carriers are obtained in [7]. I n [2 to 71 the nonlinear effect depends critically on the dependence of the carrier momentum relaxation time on carrier energy, thus for r = 0, where index r describes the type of the scattering mechanism, the current density Jf) vanishes.…”

Section: Introductionmentioning

confidence: 99%

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Higher Harmonics Generated by Mobile Carriers in Semiconductors

Stramska

1983

Physica Status Solidi (b)

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AJtheory describing the nonlinear current density in the dc external magnetic fields H in semiconductors is proposed. The addition of an energy relaxation time to the Boltzmann equation provides an analytical expression for the magneto-conductivity in a high ac electric field. It is shown that the third harmonic in the current density is not critically dependent on the dependence of the momentum relaxation time on carrier energy, thus for r = 0 (where index r describes the type of the scattering mechanism) the conductivity has the warm formEine Theorie wird vorgeschlagen, die die nichtlineare Stromdichte in Halbleitern fur $&ere magnetische Gleichfelder H , beschreibt. Die Einfuhrung einer Energierelaxationszeit in die Boltzmanngleichung liefert einen analytischen Ausdruck fur die Magneto-Leitfiihigkeit in einem hohen elektrischen Wechselfeld. Es wird gezeigt, da13 die dritte Harmonische der Stromdichte nicht kritisch von der Abhangigkeit der Impulsrelaxationszeit der Trzgerenergie abhiingt, somit hat fur r = 0 (wobei der Index r den Typ des Streumechanismus beschreibt) die Leitfiihigkeit die ,,warme" Form u = ao(l + @(o) E2).

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Section: O I L I'mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Higher Harmonics Generated by Mobile Carriers in Semiconductors

Stramska

1983

Physica Status Solidi (b)

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Amplification of Acoustohelicon Waves in Piezoelectric Semiconductors. Effect of Nonlinearity in Electron Effective Mass and Collision Frequency

Dey

Ghosh

1990

Physica Status Solidi (b)

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It is shown that the attenuation of an acoustohelicon wave crosses over to its amplification at an electron drift velocity (ud) exceeding the acoustic wave velocity (us). Firstly a phenomenological theory is developed to study the variation of the carrier temperature with wave amplitude and cyclotron frequency, and the corresponding relative change in electron effective mass and collision frequency, when the acoustohelicon wave passes through a piezoelectric semiconductor, It is inferred from the analysis that this change, due to carrier heating in high mobility semiconductors, is appreciable at high power flux of the acoustohelicon mode. Then, analytically, it is shown that this nonlineatity in carrier mass and collision frequency, arising due to the electric vector of the field associated with the wave, can also contribute to the acoustohelicon amplification behaviour. Numerical computations are made for n-InSb at 78 K. It is found that the magnetic field does not have any remarkable effect on the crossover value of the velocity ratio (= ud/U,), but at very high magnetic fields (w, 2 1013 s-') the acoustohelicon mode propagate without attenuation.Die Dampfung einer Akustohelixwelle geht iiber in ihre Verstarkung bei einer Elektronendriftgeschwindigkeit (ud), die die Geschwindigkeit der akustischen Welle (u,) iiberschreitet. Zuerst wird eine phanomenologische Theorie entwickelt, um die h d e r u n g der Tragertemperatur mi !. der Wellenamplitude und der Zyklotronfrequenz zu untersuchen, sowie die entsprechende relative Anderung in der effektiven Elektronenmasse und StoBfrequenz, wenn die Akustohelixwelle einen piezoelektrischen Halbleiter passiert. Aus der Analyse wird geschlossen, daD diese Anderung, infolge von Trageraufheizung in hochbeweglichen Halbleitern anwendbar ist bei hohem LeistungsfluB der Akustohelix-Mode. Dann wird analytisch gezeigt, daB diese Nichtlinearitat in der Tragermasse und StoDfrequenz, die infolge des elektrischen Vektors des mit der Welle verkniipften Feldes auftritt, auch zum Verstarkungsverhalten der Akustohelixwelle beitragen kann. Numerische Berechnungen werden fur n-InSb bei 78 K durchgefuhrt. Es wird gefunden, daB das Magnetfeld keinen merklichen EinfluB auf das obergangsverhalten des Geschwindigkeitsverhaltnisses (= vd/u,) hat, jedoch bei sehr hohen magnetischen Feldern (w, 2 1013 s -l ) wandert die Akustohelix-Mode ohne Dampfung.

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Landau Level Spectroscopy: Interband Effects and Faraday Rotation

Keßler¹,

Metzdorf²

1991

Landau Level Spectroscopy

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Nonlinear magneto‐optical phenomena of the third harmonic in semiconductors

Cited by 3 publications

References 6 publications

Higher Harmonics Generated by Mobile Carriers in Semiconductors

Higher Harmonics Generated by Mobile Carriers in Semiconductors

Amplification of Acoustohelicon Waves in Piezoelectric Semiconductors. Effect of Nonlinearity in Electron Effective Mass and Collision Frequency

Landau Level Spectroscopy: Interband Effects and Faraday Rotation

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