Nonlinear Effects in T-Branch Junctions

Matéos, J.; Vasallo, B. G.; Pardo, D.; González, T.; Pichonat, E.; Galloo, J.S.; Bollaert, S.; Roelens, Y.; Cappy, A.

doi:10.1109/led.2004.826571

Cited by 55 publications

(57 citation statements)

References 7 publications

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“…This behavior was also reported by Mateos et al, 11 and was explained by the concentration of electric field and decrease of conductance in the positively biased branch due to intervalley scattering of electrons. Experimentally observed features for applying asymmetric WPG voltages in Fig.…”

supporting

confidence: 84%

Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates

Nakamura

Kasai

Shiratori

et al. 2007

Applied Physics Letters

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A three-terminal nanowire junction device controlled by double nanometer-sized Schottky wrap gates ͑WPGs͒, which control left and right branches independently, are fabricated utilizing AlGaAs/ GaAs etched nanowires and characterized experimentally. Recently, nanowires have attracted much attention for the next-generation nanodevice materials. Nanowire junctions are important building blocks for nanowire-based devices and their integrated circuits. Rich functionalities were expected theoretically in these systems due to the ballistic transport of carriers 1 and self gating. 2 Clear nonlinear characteristics have been observed in three-terminal nanowire junctions of III-V compound semiconductors 3,4 and carbon nanotubes, 5 even at room temperature. In addition, capability of their high-speed operation has been demonstrated experimentally. 4,6 Their application to logic circuits has been also intensively investigated. 7,8 In this letter, we fabricate and characterize a GaAs-based three-terminal nanowire junction device, in which two branches can be controlled independently by nanometer-sized Schottky wrap gates ͑WPGs͒, in order to control the nonlinear characteristics toward nanowire-based circuits and systems. Figure 1͑a͒ shows a scanning electron microscopy ͑SEM͒ image of a fabricated device. The device had a T-branch nanowire junction formed on an AlGaAs/ GaAs heterostructure wafer by electron beam lithography and wet chemical etching. Geometrical nanowire width W geo was 560 nm. Nanowire lengths for left and right branches were 3 m and that for a center branch was 2.6 m. Cr/ Au Schottky WPGs of 400 nm gate lengths were formed on the left and right branches. The WPG wrapped around a nanowire can squeeze effective nanowire width W eff , and onedimensional channel is formed under suitable gate voltage. 9 Measured mobility and the sheet carrier density of the unprocessed wafer at room temperature ͑RT͒ were 7100 cm 2 / V s and 7.8ϫ 10 11 cm −2 , respectively. WPGcontrolled nanowire branches of the fabricated device could operate as conventional field effect transistors, as shown in Fig. 1͑b͒. They showed good gate control characteristics and operated similarly to each other. Their threshold voltages for nanowire channel pinch off were −0.9 V. In this study, all measurements were carried out at RT. Figure 2 shows measured output voltages at the center terminal, V C , by applying voltages to the left and right terminals, V L and V R , respectively, in push-pull fashion, namely, V R =−V L . When left and right WPG voltages V GL and V GR , respectively, were kept at 0 V, V C showed bell-like curves and was always negative as shown in Fig. 2, indicated by dashed lines. We also fabricated and characterized a three-terminal device without WPGs and similar characteristic was obtained. Next, V C was measured by changing V GL while keeping V GR at 0 V. Obtained V C -V L curves are shown in Fig. 2͑a͒

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supporting

confidence: 84%

Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates

Nakamura

Kasai

Shiratori

et al. 2007

Applied Physics Letters

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“…It is important to remark that the operating principle of SSDs, unlike other semiconductor nanodevices (TBJs, YBJs, ballistic rectifiers), [7][8][9] is not based on ballistic transport or high mobility, and therefore SSDs could also be fabricated on…”

Section: Monte Carlo Modelmentioning

confidence: 99%

“…Some theoretical descriptions of the operation of ballistic devices have been proposed [2][3][4] , always starting from a coherent transport description based on the Landauer-Buttiker formalism 5,6 . In this work we will make use of a semiclassical 2D Monte Carlo (MC) simulation [successfully employed in previous works for the modelling of different types of InGaAs-based nanodevices: T-and Y-branch junctions and ballistic rectifiers [7][8][9][10][11] ] to explain the physics of the operation of InAlAs/InGaAs based SSDs and SSTs. MC simulations provide an insight of the processes taking place inside the devices, thus allowing us to relate the macroscopic results of the experiments with the microscopic behavior of electrons.…”

Section: Introductionmentioning

confidence: 99%

THz operation of self-switching nano-diodes and nano-transistors

et al. 2005

Self Cite

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By means of the microscopic transport description supplied by a semiclassical 2D Monte Carlo simulator, we provide an in depth explanation of the operation (based on electrostatic effects) of the nanoscale unipolar rectifying diode, so called self-switching diode (SSD), recently proposed in [A. M. Song, M. Missous, P. Omling, A. R. Peaker, L. Samuelson, and W. Seifert, Appl. Phys. Lett. 83, 1881Lett. 83, (2003]. This device provides a rectifying behavior without the use of any doping junction or barrier structure (like in p-n or Schottky barrier diodes) and can be fabricated with a simple single-step lithographic process. The simple downscaling of this device and the use of materials providing high electron velocity (like high In content InGaAs channels) allows to envisage the fabrication of structures working in the THz range. With a slight modification of the geometry of the SSD, a lateral gate contact can be added, so that a nanometer self-switching transistor (SST) can be easily fabricated. We analyze the high frequency performance of the diodes and transistors and provide design considerations for the optimization of the downscaling process.

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“…In the case of the n-type semiconductor, the channel depletion occurs in the positively biased branch, as shown in Fig. 2(b) [19][20][21][22][23][24][25][26] .…”

Section: Device Operation and Possible Mechanismsmentioning

confidence: 99%

“…However, experimentally, it is also clearly observed at room temperature (RT) [14][15][16][17][18] where the carrier transport should be in the nonballistic transport regime. The mechanism in such a case has not been clarified yet, although several hypotheses have been introduced, including those regarding the effective mean free path extension 16) and the asymmetric channel depletion due to the surface potential [19][20][21][22][23][24][25][26] .…”

Section: Introductionmentioning

confidence: 99%

Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method

Sato

Kasai

2013

Jpn. J. Appl. Phys.

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Nonlinear voltage transfer characteristics in GaAs-based three-branch nanowire junction (TBJ) devices were investigated by a light-induced local conductance modulation method. In this measurement system, the conductance in the device was locally increased by focused laser light irradiation. The nonlinear transfer curve was greatly changed when the laser light was irradiated on the positively biased branch. The conductance domain was found to exist at the end of the positively biased branch of the TBJ by scanning the light position. When a SiN x thin layer was deposited on the nanowire surface, the surface potential was increased and the nonlinearity in the transfer curve was reinforced simultaneously. The obtained results suggest that the asymmetric channel depletion model is appropriate for the observed nonlinearity mechanism in the GaAs TBJ at room temperature.

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Nonlinear Effects in T-Branch Junctions

Cited by 55 publications

References 7 publications

Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates

Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates

THz operation of self-switching nano-diodes and nano-transistors

Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method

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