An asymmetric artificial scatterer in a semiconductor microjunction is shown to dramatically affect the nonlinear transport of ballistic electrons. The chosen device geometry, defined in a GaAs-AlGaAs heterostructure, successfully guides carriers in a predetermined spatial direction, independent of the direction of the input current I. From the nonlinear current-voltage characteristic we obtain unusual symmetry relations for the four-terminal resistances with R ij,kl ͑I͒ ഠ 2R ij,kl ͑2I͒ and R ij,kl ͑B͒ ¿ R kl,ij ͑2B͒ even at zero magnetic field B. The ballistic rectifier thus realized relies on a new kind of rectification mechanism entirely different from that of an ordinary diode. [S0031-9007(98)05927-4] PACS numbers: 73.23. Ad, 73.40.Ei, 73.50.Fq The high mobilities of state-of-the art two-dimensional electron gases in semiconductor heterostructures, combined with device fabrication technologies with high spatial resolution, have made it possible to study electron transport through semiconductor devices in which characteristic feature sizes are small in comparison with the elastic mean free path between scattering events caused by residual impurities. In such microstructures, electrons do not propagate diffusively as in traditional semiconductor devices but instead ballistically, with their path largely determined by specular reflection from device boundaries. Based on ballistic electron transport, a variety of novel phenomena have been observed in such microdevices. Examples are electron focusing [1], bend resistances [2], and a quenched or negative Hall effect [3,4]. Within the framework of the Landauer-Büttiker formalism, models have been developed to explain the above linear transport phenomena [5]. However, comparatively less attention has been given to the nonlinear ballistic transport regime in which electric fields or currents become so large that they significantly affect the momentum distribution of the carriers without destroying ballistic motion by inelastic scattering processes. Only recently has it been recognized in both theoretical and experimental studies that it is rather challenging to also investigate the nonlinear ballistic transport regime [6-8]. Even though several groups have realized that the introduction of artificial asymmetries should have a significant effect on nonlinear ballistic transport [9][10][11], so far, no strong nonlinear effects induced by a broken device symmetry have been observed.Here we introduce a novel device geometry which is particularly suitable to study the effects of reduced symmetry on the nonlinear ballistic transport properties. By inserting an asymmetric scatterer into the center of a ballistic cross junction, we observe unusual nonlinear current-voltage characteristics which we show to be dominated by the symmetry properties of the scatterer. The size of the artificial scatterer is much larger than the Fermi wavelength l F of the conducting electrons and comparable to their elastic mean free path l e ͑l e ¿ l F ͒. We demonstrate a successful guidance of...

By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography.

Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

We demonstrate that nanotubular networks formed by enzyme-triggered self-assembly of Fmoc-L3 (9-fluorenylmethoxycarbonyl-tri-leucine) show significant charge transport. FT-IR, fluorescence spectroscopy and wide angle X-ray scattering (WAXS) data confirm formation of beta-sheets that are locked together viapi-stacking interactions. Molecular dynamics simulations confirmed the pi-pi stacking distance between fluorenyl groups to be 3.6-3.8 A. Impedance spectroscopy demonstrated that the nanotubular xerogel networks possess minimum sheet resistances of 0.1 MOmega/sq in air and 500 MOmega/sq in vacuum (pressure: 1.03 mbar) at room temperature, with the conductivity scaling linearly with the mass of peptide in the network. These materials may provide a platform to interface biological components with electronics.

Despite being a fundamental electronic component for over 70 years, it is still possible to develop different transistor designs, including the addition of a diode-like Schottky source electrode to thin-film transistors. The discovery of a dependence of the source barrier height on the semiconductor thickness and derivation of an analytical theory allow us to propose a design rule to achieve extremely high voltage gain, one of the most important figures of merit for a transistor. Using an oxide semiconductor, an intrinsic gain of 29,000 was obtained, which is orders of magnitude higher than a conventional Si transistor. These same devices demonstrate almost total immunity to negative bias illumination temperature stress, the foremost bottleneck to using oxide semiconductors in major applications, such as display drivers. Furthermore, devices fabricated with channel lengths down to 360 nm display no obvious short-channel effects, another critical factor for high-density integrated circuits and display applications. Finally, although the channel material of conventional transistors must be a semiconductor, by demonstrating a high-performance transistor with a semimetal-like indium tin oxide channel, the range and versatility of materials have been significantly broadened.

A graphene ballistic rectifier is used in conjunction with an antenna to demonstrate a rectenna as a terahertz (THz) detector. A small-area (<1 μm) local gate is used to adjust the Fermi level in the device to optimize the output while minimizing the impact on the cutoff frequency. The device operates in both n- and p-type transport regimes and shows a peak extrinsic responsivity of 764 V/W and a corresponding noise equivalent power of 34 pW Hz at room temperature with no indications of a cutoff frequency up to 0.45 THz. The device also demonstrates a linear response for more than 3 orders of magnitude of input power due to its zero threshold voltage, quadratic current-voltage characteristics and high saturation current. Finally, the device is used to take an image of an optically opaque object at 0.685 THz, demonstrating potential in both medical and security imaging applications.

By using arrays of nanowires with intentionally broken symmetry, we were able to detect microwaves up to 110 GHz at room temperature. This is, to the best of our knowledge, the highest speed that has been demonstrated in different types of novel electronic nanostructures to date. Our experiments showed a rather stable detection sensitivity over a broad frequency range from 100 MHz to 110 GHz. The novel working principle enabled the nanowires to detect microwaves efficiently without a dc bias. In principle, the need for only one high-resolution lithography step and the planar architecture allow an arbitrary number of nanowires to be made by folding a linear array as many times as required over a large area, for example, a whole wafer. Our experiment on 18 parallel nanowires showed a sensitivity of approximately 75 mV dc output/mW of nominal input power of the 110 GHz signal, even though only about 0.4% of the rf power was effectively applied to the structure because of an impedance mismatch. Because this array of nanowires operates simultaneously, low detection noise was achieved, allowing us to detect -25 dBm 110 GHz microwaves at zero bias with a standard setup.

Bioresorbable electronic technologies form the basis for classes of biomedical devices that undergo complete physical and chemical dissolution after a predefined operational period, thereby eliminating the costs and risks associated with secondary surgical extraction. A continuing area of opportunity is in the development of strategies for power supply for these systems, where previous studies demonstrate some utility for biodegradable batteries, radio frequency harvesters, solar cells, and others. This paper introduces a type of bioresorbable system for wireless power transfer, in which a rotating magnet serves as the transmitter and a bioresorbable antenna as the remote receiver, with capabilities for operation at low frequencies (<200 Hz). Systematic experimental and numerical studies demonstrate several unique advantages of this system, most significantly the elimination of impedance matching and electromagnetic radiation exposure presented with the types of radio frequency energy harvesters explored previously. These results add to the portfolio of power supply options in bioresorbable electronic implants.