Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices

Miranda, E.; Kano, S.; Dou, Chunmeng; Kakushima, Kuniyuki; Suñé, J.; Iwai, Hiroshi

doi:10.1063/1.4733356

Cited by 44 publications

(56 citation statements)

References 13 publications

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“…This picture [7] is based on the observation [12] that, for a sufficiently high write current, the ON-state conductance of Ag/GeS 2 cells tends to be an integer multiple of G 0 =2e 2 /h (Fig. 3), as observed earlier in gap-type "atomic switches" [14] and recently in many other types of gapless cells [15][16][17][18][19][20][21][22]. Quantization of the conductance implies Fig.…”

Section: Discussionmentioning

confidence: 97%

Conductive-bridge memory (CBRAM) with excellent high-temperature retention

Jameson¹,

Blanchard²,

Cheng³

et al. 2013

2013 IEEE International Electron Devices Meeting

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Section: Discussionmentioning

confidence: 97%

Conductive-bridge memory (CBRAM) with excellent high-temperature retention

Jameson¹,

Blanchard²,

Cheng³

et al. 2013

2013 IEEE International Electron Devices Meeting

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“…In recent years, observation of quantized conductance discrete steps characterized by integer or half integer multiples of G 0 5 2e 2 /h has been reported in ECMs 8,[12][13][14][15][16][17][18] and VCMs. [19][20][21][22][23] While there is a few studies on the conductance quantization effect in TCMs, 14,24 we have reported that a conductive filament including a quantum point contact (QPC) can be formed in Pt/NiO/Pt RS cells. by initial voltage sweeping in the cells.…”

Section: Introductionmentioning

confidence: 99%

Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells

2017

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A resistive switching (RS) phenomenon, namely reversible transitions between the low and high resistance states after forming process, is caused by the formation and rupture of a conductive filament. We confirmed that conductive filaments including a quantum point contact (QPC) in Pt/NiO/Pt RS cells were formed by semiforming, the first step of the forming process. In this study, we examine correlation between microscopic structures in NiO layers and forming characteristics in the Pt/NiO/Pt cells. The appearance condition of the quantized conductance is considered to be associated with the composition ratio of O to Ni of either equivalent to or larger than a critical value. Furthermore, we proposed a RS model based on the forming characteristics especially obtained from the RS cells with different size. Defects which act as the source of a conductive filament including a QPC by semiforming may be randomly distributed in a NiO layer according to Poisson statistics.

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“…The confinement of electrons within the nanometre diameter filament results in a set of discrete and finite one-dimensional sub-bands in the conduction band of the filament. It is through these bands that electrons flow [55,56] ( Fig. 13.8).…”

Section: Quantisation Of Conductancementioning

confidence: 97%

“…Miranda et al [55] have applied this to electron transport in CeO x -based resistive switching devices.…”

Section: Quantisation Of Conductancementioning

confidence: 98%

Resistive Switching in Oxides

Mehonić¹,

Kenyon²

2015

Defects at Oxide Surfaces

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Resistive switching in oxides, the phenomenon whereby the resistance of samples of the matrix can be cycled between states with contrasts of up to several orders of magnitude, has received growing attention over the past decade thanks to the possibility of exploiting this effect in novel memory technologies. Here we summarise the current state of the art in the field, paying particular attention to the underlying mechanisms of switching, which involves the creation of defects in the oxide. We also describe potential technological applications. IntroductionRecent years have seen a rapid growth of interest in materials whose electrical resistance can be changed by the application of an electric field. Of course, the phenomenon of irreversible electrical breakdown (so-called "hard breakdown") in oxides has long been studied as a failure mechanism in microelectronics-initially in capacitors and high voltage devices, then in thin films in integrated microelectronics-and, as such, is of great interest to industry as a problem to be mitigated. However, the resistive switching we refer to here is a reversible process whereby material can be cycled between two or more resistance states many times, enabling non-volatile memory technologies. Because of the range of potential technological applications-from replacements for existing technologies such as flash, to novel neuromorphic (neuron-mimicking) systems-resistive switching is now seen as an opportunity rather than a problem, and academic and industrial interest has grown to the point at which there are several hundred publications per year on all aspects of resistive switching materials and devices. Although we will not discuss fundamental issues associated with defect formation on oxides, these can be found in other chapters in the volume.

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Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices

Cited by 44 publications

References 13 publications

Conductive-bridge memory (CBRAM) with excellent high-temperature retention

Conductive-bridge memory (CBRAM) with excellent high-temperature retention

Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells

Resistive Switching in Oxides

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