The electron transport in W/CeOx/SiO2/NiSi2 resistive switching devices fabricated onto a p+-type Si substrate is investigated. It is shown that the structures exhibit bipolar switching with conductance values in the low resistance state (LRS) close to integer and half integer values of the quantum unit G0 = 2e2/h, e and h being the electron charge and Planck constant, respectively. This behavior is consistent with the so-called nonlinear conduction regime in quantum point-contacts. A simple model for the LRS current-voltage characteristic based on the finite-bias Landauer formula which accounts for the right- and left-going conduction modes dictated by the constriction’s cross-section area and the voltage drop distribution along the filamentary path is reported.

Bipolar resistive switching characteristics of CeO x layer on Si-based bottom electrodes (BE) are presented. Owing to the formation and the presence of a thin SiO 2 interfacial layer (SiO 2 -IL) between the CeO x layer and BE, the set process is triggered by a local breakdown at the thin SiO 2 -IL due to large differences in dielectric constants. Reset process, on the other hand, is obtained by local anodic oxidation to the breakdown spots by the high oxygen ion conductivity of the CeO x layer. High insulating properties of SiO 2 -IL enables obtaining a resistance ratio of over 10 5 at high-resistive-state to low-resistive-state. A model to explain the resistance ratio has been proposed using initial trap density of SiO 2 -IL. Moreover, forming-free feature can be achieved with NiSi 2 BE.

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Resistance changing of ion binding insulator hardly obtain large on and off resistance ratio. Resistance switching properties using Ni, W and Ti as a bottom electrode ware caused of changing resistance of Ce oxide. The influence of metal electrode on resistive switching behavior of CeOx film has been investigated. Resistance switching characteristics using NiSi2 electrode shows a large on and off window as large as 105. The main differences of the switching properties among the electrode materials are thought to be the reaction between the Ce oxide layer and electrodes. The set voltage dependence on the thickness of Ce oxide layers has indicated that the switching behavior is based on electric field.

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