Conductive-bridge memory (CBRAM) with excellent high-temperature retention

Jameson, John R.; Blanchard, Paul T.; Cheng, C.-W.; Dinh, John; Gallo, Antonio R.; Gopalakrishnan, V. K.; Gopalan, C.; Guichet, Berenice; Hsu, Sheng Teng; Kamalanathan, Deepak; Kim, D.; Koushan, Foroozan; Kwan, Ming; Law, Kock‐Yee; Lewis, Derric; Yi, Ma; McCaffrey, Vincent; Park, S.; Puthenthermadam, S.; Runnion, E.; Sanchez, Juana A. Cerna; Shields, J.; Tsai, Kuang‐Lei; Tysdal, A.; Wang, D.; Williams, Roger; Kozicki, Michael; Wang, J.; Gopinath, Venkatesh; Hollmer, Shane; Buskirk, Michael Van

doi:10.1109/iedm.2013.6724721

Cited by 65 publications

(45 citation statements)

References 16 publications

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“…This is achieved by changing the Fermi wavelength of the CF material by semiconductors doping. Jameson et al [36] demonstrated improved stability of the CF and enabled the usage of LRS resistances showing lower conductance as compared to the pure metallic case. One clear advantage of this approach is the reduced operative power on large arrays without compromise in CF stability.…”

Section: Device Optimizationmentioning

confidence: 98%

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Filamentary-Based Resistive Switching

Celano

2016

Metrology and Physical Mechanisms in New Generation Ionic Devices

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Section: Device Optimizationmentioning

confidence: 98%

“…Aratani et al [56] presented four-level operation for a 20-nm scaled device structure with 10 7 cycles endurance. Finally, Jameson et al [36] presented a 1 Mb array structure integrated in 1T1R showing 10 ns fast pulse operation with 1000 hours retention at 200…”

Section: Device Optimizationmentioning

confidence: 98%

Filamentary-Based Resistive Switching

Celano

2016

Metrology and Physical Mechanisms in New Generation Ionic Devices

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“…High temperature retention due to random diffusion of Ag or Cu atoms in the insulator has historically been considered a moderate weakness for EMB ReRAM. However, recent results show excellent retention, with states holding after 1000 h at 200°C [19]. Scalability to dimensions of 20 nm has been demonstrated for a GeSe EMB cell [20].…”

Section: Electrochemical Metallization Bridgementioning

confidence: 99%

Emerging Memory Devices: Assessment and Benchmarking

Marinella

Zhirnov

2014

Emerging Nanoelectronic Devices

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“…13 An attraction is that memory based on structural changes should be non-volatile: ON-state data retention in PMC is estimated to be >10 yrs at room temperature; 8 and recently retention up to 10 5 minutes at 200 • C has been demonstrated for Ge-S-based PMC. 14 On the other hand, damage accumulation can limit the endurance; beyond 10 11 cycles is claimed with 20% decrease in ON current after 10 16 cycles. 15 PMC memory is highly scalable, including 3-D porous alumina templating.…”

Section: Introductionmentioning

confidence: 99%

Reversible migration of silver on memorized pathways in Ag-Ge40S60 films

et al. 2015

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Reversible and reproducible formation and dissolution of silver conductive filaments are studied in Ag-photodoped thin-film Ge 40 S 60 subjected to electric fields. A tip-planar geometry is employed, where a conductive-atomic-force microscopy tip is the tip electrode and a silver patch is the planar electrode. We highlight an inherent "memory" effect in the amorphous chalcogenide solid-state electrolyte, in which particular silver-ion migration pathways are preserved "memorized" during writing and erasing cycles. The "memorized" pathways reflect structural changes in the photodoped chalcogenide film. Structural changes due to silver photodoping, and electrically-induced structural changes arising from silver migration, are elucidated using Raman spectroscopy. Conductive filament formation, dissolution, and electron (reduction) efficiency in a lateral device geometry are related to operation of the nano-ionic Programmable Metallization Cell memory and to newly emerging chalcogenide-based lateral geometry MEMS technologies. The methods in this work can also be used for qualitative multi-parameter sampling of metal/amorphous-chalcogenide combinations, characterizing the growth/dissolution rates, retention and endurance of fractal conductive filaments, with the aim of optimizing devices. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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Conductive-bridge memory (CBRAM) with excellent high-temperature retention

Cited by 65 publications

References 16 publications

Filamentary-Based Resistive Switching

Filamentary-Based Resistive Switching

Emerging Memory Devices: Assessment and Benchmarking

Reversible migration of silver on memorized pathways in Ag-Ge40S60 films

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