Articles you may be interested inInvestigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch J. Appl. Phys. 115, 094503 (2014); 10.1063/1.4866715Plasma waves in two-dimensional electron-hole system in gated graphene heterostructures Etching trenches to effectively create electron quantum wires for single-electron-transistor applicationsWe have solved in space and time the effective-mass nonlinear Schrödinger equation for an electron-hole gas in a semiconductor quantum wire. If the carrier density is large enough, we have obtained the diffusion of coupled electron and hole densities considering a Coulomb interaction between both electron-hole gases. In this way, we have shown the possibility of having an inverse Mott transition in a quantum wire after an optical excitation of the sample.