We study localized modes in binary mixtures of Bose-Einstein condensates embedded in onedimensional optical lattices. We report a diversity of asymmetric modes and investigate their dynamics. We concentrate on the cases where one of the components is dominant, i.e. has much larger number of atoms than the other one, and where both components have the numbers of atoms of the same order but different symmetries. In the first case we propose a method of systematic obtaining the modes, considering the "small" component as bifurcating from the continuum spectrum. A generalization of this approach combined with the use of the symmetry of the coupled Gross-Pitaevskii equations allows obtaining breather modes, which are also presented.
Optimal detectivities of very long wavelength (11–19 μm) photovoltaic infrared detectors based on ideal InAs/InGaSb superlattices are calculated. Accurate K⋅p band structures are used to obtain radiative, electron–electron and hole–hole band-to-band Auger, and for the first time shallow acceptor level assisted Auger recombination rates for n-on-p photodiodes. The suppression of band-to-band Auger by ‘‘band gap engineering’’ is predicted to lead to improved background-limited operating temperatures just as it does in long-wave InAs/InGaSb infrared detectors.
Ideal threshold current densities of 2.1-4.1 pm IR lasers are calculated for active layers composed of InAs/InGaSb superlattices, InGaAsSb quantum well quaternaries, InAsSb bulk ternaries, and HgCdTe superlattices. The fully K-dependent band structure and momentum matrix elements, obtained from a superlattice K-p calculation, are used to calculate the limiting Auger and radiative recombination rates and the threshold current density. InGaAsSb quantum wells and InAs/InGaSb superlattices are found to be more promising laser candidates than HgCdTe superlattices and InAsSb bulk ternaries. The calculated threshold current densities of InAs/InGaSb superlattices are similar to those of InGaAsSb active layers at 2.1 pm, but are significantly lower at longer wavelengths. Comparison with experiment indicates that the threshold current densities of InGaAsSb-based devices are about three times greater than those calculated for 25 cm-' gain. The threshold current densities of present InAslInGaSb superlattices are limit. 0 1995 American Institute ojL' Physics.
The transient response of a stationary state of a quantum particle in a step potential to an instantaneous change in the step height (a simplified model for a sudden bias switch in an electronic semiconductor device) is solved exactly by means of a semianalytical expression. The characteristic times for the transient process up to the new stationary state are identified. A comparison is made between the exact results and an approximate method.
We investigate possibilities of existence of inhomogeneous dark states of atomic-molecular Bose-Einstein condensates loaded in trap potentials. The system is described by three-coupled equations of the Gross-Pitaevskii type, which account for contributions of the kinetic energy, two-body interactions, and an external potential, and which govern the conversion between atoms and molecules in the stimulated Raman adiabatic passage. We report a class of trapping potentials allowing for the existence of localized stable dark states. The respective atomic and molecular distributions are computed, and their stability and dynamics are discussed.
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