Theoretical performance of very long wavelength InAs/In<i>x</i>Ga1−<i>x</i>Sb superlattice based infrared detectors

Grein, C. H.; Cruz, H.; Flatté, Michael E.; Ehrenreich, H.

doi:10.1063/1.112626

Cited by 65 publications

(27 citation statements)

References 11 publications

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“…1 The ability to engineer the bandgap promises low Auger recombination rates. 2 In practice, however, InAs/ Ga 1Àx In x Sb T2SL material is limited by ShockleyRead-Hall (SRH) recombination, [3][4][5] resulting in short minority-carrier lifetimes (tens of nanoseconds at 77 K) that do not approach the theoretical limit determined by Auger recombination. A number of studies have been carried out to determine the source of the SRH recombination center, including investigating the influences of varying the number of superlattice interfaces per unit length, 6 surface recombination with varying absorber width, 7 absorber doping level, 8 and interface type.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence

Connelly

Metcalfe

Shen

et al. 2013

Journal of Elec Materi

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Time-resolved photoluminescence (TRPL) spectroscopy is used to study the minority-carrier lifetime in mid-wavelength infrared, n-type, InAs/Ga 1Àx In x Sb type II superlattices (T2SLs) and investigate the recombination mechanisms and trap states that currently limit their performance. Observation of multiple exponential decays in the intensity-dependent TRPL data indicates trap saturation due to the filling then emptying of trap states and different Shockley-Read-Hall (SRH) lifetimes for minority and majority carriers, with s maj (s n0 ) ) s min (s p0 ). Simulation of the photoluminescence transient captures the qualitative behavior of the TRPL data as a function of temperature and excess carrier density. A trap state native to Ga 1Àx In x Sb is identified from the low-injection temperature-dependent TRPL data and found to be located below the intrinsic Fermi level of the superlattice, approximately 60 ± 15 meV above the valence-band maximum. Low-temperature TRPL data show a variation of the minority-carrier SRH lifetime, s p0 , over a set of InAs/Ga 1Àx In x Sb T2SLs, where s p0 increases as x is varied from 0.04 to 0.065 and the relative layer thickness of Ga 1Àx In x Sb is increased by 31%.

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Section: Introductionmentioning

confidence: 99%

Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence

Connelly

Metcalfe

Shen

et al. 2013

Journal of Elec Materi

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“…In calculations typical values for the n-side donor concentration (N d = 1´10 15 cm -3 ), the narrow bandgap active layer thickness (10 µm), and quantum efficiency (60%) have been used. The predicted thermally limited detectivities of the type II SLS are larger than those for HgCdTe [55,69]. From Fig. 14 results that the measured thermally limited detectivities of type-II SLS photodiodes are as yet inferior to current HgCdTe photodiode performance.…”

Section: Superlattice Photodiodesmentioning

confidence: 70%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed.Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs).In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

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“…17,18,24,35,[37][38][39][40][41] Using the methods described in those publications, we report here predictions of dark currents in ideal and nonideal InAs/GaInSb SL-based photodiodes compared with HgCdTe alloybased ones. Dark currents in well-designed HgTe/ CdTe and HgTe/CdZnTe SLs are expected to be similar to those in well-designed InAs/GaInSb SLs.…”

Section: Resultsmentioning

confidence: 97%

Strained and Unstrained Layer Superlattices for Infrared Detection

Grein

Garland

Flatté

2009

Journal of Elec Materi

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Strained HgTe/CdZnTe or InAs/GaInSb, and essentially unstrained HgTe/ CdTe superlattices (SLs), are possible materials systems for implementation in future-generation infrared imaging systems. In addition to cutoff wavelengths spanning the infrared spectrum, they offer degrees of freedom in their design (e.g., layer thicknesses, alloy compositions, and number of layers in one superlattice period) that permit the optimization of an infrared detectorÕs figures of merit such as detectivity through the tuning of material properties such as recombination lifetimes and optical absorption. This paper provides a brief overview of the anticipated advantages of the SLs over HgCdTe alloybased infrared photon detector technology and the relative merits of the II-VI and III-V semiconductor-based SLs.

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Theoretical performance of very long wavelength InAs/InxGa1−xSb superlattice based infrared detectors

Cited by 65 publications

References 11 publications

Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence

Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence

New material systems for third generation infrared photodetectors

Strained and Unstrained Layer Superlattices for Infrared Detection

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