Coulomb effects and carrier diffusion in semiconductor quantum wires

Abstract

Articles you may be interested inInvestigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch J. Appl. Phys. 115, 094503 (2014); 10.1063/1.4866715Plasma waves in two-dimensional electron-hole system in gated graphene heterostructures Etching trenches to effectively create electron quantum wires for single-electron-transistor applicationsWe have solved in space and time the effective-mass nonlinear Schrödinger equation for an electron-hole gas in a semiconductor quantum wire. If the carrier density is large enough, we have obtained the diffusion of coupled electron and hole densities considering a Coulomb interaction between both electron-hole gases. In this way, we have shown the possibility of having an inverse Mott transition in a quantum wire after an optical excitation of the sample.

Laser-Induced Charge Separation in CdSe Nanowires

“…This is also in agreement with an experiment by Protasenko et al, who showed that charge carriers are free to move through the NW with a frequency of at least 500 kHz or 2 μs upon applying an external oscillating field . Furthermore, Cruz et al performed calculations on the charge carrier diffusion in semiconductor quantum wires by solving the time-dependent Schrödinger equation for initially placed charge carriers . Even though they calculated only the first picoseconds, they were able to show that the electrons diffuse faster than the holes.…”

“…24 Furthermore, Cruz et al performed calculations on the charge carrier diffusion in semiconductor quantum wires by solving the time-dependent Schr€ odinger equation for initially placed charge carriers. 25 Even though they calculated only the first picoseconds, they were able to show that the electrons diffuse faster than the holes.…”