Nonlinear characterization techniques for improving accuracy of GaN HEMT model predictions in RF power amplifiers

Marante, Reinel; García, José Ángel García; Cabria, L.; Aballo, T.; Cabral, Pedro M.; Pedro, José C.

doi:10.1109/mwsym.2010.5515568

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…The extraction was performed using a small signal and low frequency RF excitation at gate terminal, as in the classic procedure [2], but superimposed over a triangle‐shaped biasing signal, covering the range from below pinch‐off up to positive values near to the gate conduction level. In this dynamic type of characterization [4], the derivative profiles may be captured in a single sweep of a Vector Signal Analyzer (Agilent 89600), avoiding the appearance of self‐heating or trap‐related dispersion effects.…”

Section: Phemt‐based Down‐converting Topology With Vector Control mentioning

confidence: 99%

Frequency down‐converter with vector control capability for receiving phased array applications

Marante

García

Cabria

et al. 2012

Micro & Optical Tech Letters

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In this article, a simple and nonexpensive solution to be used as constitutive element in receiving phased arrays is proposed. Properly adjusting a PHEMT gate biasing voltage, when used in an active mixing topology, the fundamental component of its time‐varying transconductance may be controlled, both in magnitude and sign. In this way, a down‐converting I/Q architecture, implemented over two of such mixers, is shown to allow the desired level adjustment and phase shifting over the resulting intermediate frequency signal, either for beamsteering or beamforming purposes. The down‐converter performance may be accurately predicted, not only in terms of the desired but also of the intermodulation distortion components, based on the use of two‐dimensional converting transfer functions. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1371–1375, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26806

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Section: Phemt‐based Down‐converting Topology With Vector Control mentioning

confidence: 99%

Frequency down‐converter with vector control capability for receiving phased array applications

Marante

García

Cabria

et al. 2012

Micro & Optical Tech Letters

Self Cite

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Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion

Alim

Rezazadeh

Gaquière

et al. 2015

2015 European Microwave Conference (EuMC)

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GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications

Parker

2020

2020 IEEE/MTT-S International Microwave Symposium (IMS)

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Nonlinear characterization techniques for improving accuracy of GaN HEMT model predictions in RF power amplifiers

Cited by 3 publications

References 7 publications

Frequency down‐converter with vector control capability for receiving phased array applications

Frequency down‐converter with vector control capability for receiving phased array applications

Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion

GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications

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